Publication

Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Nicolas Grandjean, Jean-François Carlin
2008
Journal Articles

Abstract

Fluoride plasma treatment similar to that used in AlGaN/GaN HEMTs has been applied to InAlN/GaN HEMTs. Enhancement mode of operation is obtained with a pinch-off voltage shifted by 3 V. Owing to the fluoride treatment an increase of the forward gate threshold to 3.5 V is observed. The small-signal performances are essentially unchanged. The thermal stability of this process has been assessed for the first time and appears to be limited to approximately 500 degrees C.

Official source

https://infoscience.epfl.ch/entities/publication/92e9b217-346a-4132-a55e-3692961bdc14

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Effect of fluoride plasma treatment on InAlN/GaN HEMTs

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