Publication
Fluoride plasma treatment similar to that used in AlGaN/GaN HEMTs has been applied to InAlN/GaN HEMTs. Enhancement mode of operation is obtained with a pinch-off voltage shifted by 3 V. Owing to the fluoride treatment an increase of the forward gate threshold to 3.5 V is observed. The small-signal performances are essentially unchanged. The thermal stability of this process has been assessed for the first time and appears to be limited to approximately 500 degrees C.
Edoardo Charbon, Christian Enz, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico
Olivier Martin, Mihai Adrian Ionescu, Teodor Rosca, Marco Riccardi, Fatemeh Qaderi Rahaqi
Christian Enz, Assim Boukhayma, Antonino Caizzone