Publication

Rapid deposition of hydrogenated microcrystalline silicon by a high current DC discharge

Christoph Hollenstein, Alan Howling, Thierry Delachaux
2001
Journal Articles

Abstract

Microcrystalline hydrogenated silicon films (muc-Si:H) have been deposited by a high current DC plasma in argon-silane-hydrogen mixtures at growth rates up to 10 nm/s and at substrate temperatures below 500 degreesC. Scanning electron microscopy, X-ray diffraction and FTIR analyses show that these films are highly crystallized. The surface morphology depends strongly on the experimental conditions and varies from a cauliflower structure to a prismatic one. The crystalline orientation of the films also changes with the experimental conditions whereas other properties such as crystallite size, columnar growth, and crystallinity of the films remain unchanged. (C) 2001 Elsevier Science B.V. All rights reserved.

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https://infoscience.epfl.ch/entities/publication/80f89a2f-d753-4e2d-bbfb-a54f4b2cdedc

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Christoph Hollenstein, Alan Howling, Thierry Delachaux
2001
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/80f89a2f-d753-4e2d-bbfb-a54f4b2cdedc

About this result

Related concepts (32)

Chemical vapor deposition

Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.

Crystallinity

Crystallinity refers to the degree of structural order in a solid. In a crystal, the atoms or molecules are arranged in a regular, periodic manner. The degree of crystallinity has a big influence on hardness, density, transparency and diffusion. In an ideal gas, the relative positions of the atoms or molecules are completely random. Amorphous materials, such as liquids and glasses, represent an intermediate case, having order over short distances (a few atomic or molecular spacings) but not over longer distances.

Scanning electron microscope

A scanning electron microscope (SEM) is a type of electron microscope that produces images of a sample by scanning the surface with a focused beam of electrons. The electrons interact with atoms in the sample, producing various signals that contain information about the surface topography and composition of the sample. The electron beam is scanned in a raster scan pattern, and the position of the beam is combined with the intensity of the detected signal to produce an image.

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Rapid deposition of hydrogenated microcrystalline silicon by a high current DC discharge

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