Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems

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Microwave superconducting resonators are extensively studied in fields such as quantum computing and electron spin resonance (ESR) spectroscopy. However, the integration of superconducting resonators with feedback mechanisms to create ultra-low noise oscil ...

The photophysical properties of low‐dimensional metal‐halide semiconductors and their tunability make them promising candidates for light‐absorbing and emitting applications. Yet, the germanium‐based halide perovskites to date lack desirable light‐emitting ...

Monolayers of transition-metal dichalcogenides, such as MoS 2 , have attracted significant attention for their exceptional electronic and optical properties, positioning them as ideal candidates for advanced optoelectronic applications. Despite their stron ...

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

Accurately measuring cortisol levels is crucial for diagnosing and managing stress-related conditions. Among all biofluids containing cortisol, Interstitial fluid (ISF) offers distinct advantages such as stable pH, continuous extraction, and minimal contam ...

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

In traditional power delivery networks, the on-chip supply voltage is provided by board-level converters. Due to the significant distance between the converter and the load, variations in the load current are not effectively managed, producing a significan ...

We demonstrate the use of both pixelated differential phase contrast (DPC) scanning transmission electron microscopy (STEM) and off-axis electron holography (EH) for the measurement of electric fields and assess the advantages and limitations of each techn ...

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Silicone elastomers are widely used in various applications, each demanding different properties and functionalities. To be used in such a broad spectrum, silicones with easily tunable or switchable properties are needed. We showed this is achievable with ...

On-surface synthesis has become a prominent method for growing low-dimensional carbon-based nanomaterials on metal surfaces. However, the necessity of decoupling organic nanostructures from metal substrates to exploit their properties requires either trans ...

Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing starts at temperatures as low as about 250 degrees C. The healing processes result in an irreversible transiti ...

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Transient electronics have emerged as a new category of devices that can degrade after their functional lifetime, offering tremendous potential as disposable sensors, actuators, wearables, and implants. Additive manufacturing methods represent a promising ...

In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems

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Superconducting microwave oscillators as detectors for ESR spectroscopy

Narrow‐Linewidth Emission and Weak Exciton‐Phonon Coupling in 2D Layered Germanium Halide Perovskites

Polarization-Dependent Plasmon-Induced Doping and Strain Effects in MoS 2 Monolayers on Gold Nanostructures

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Lithium tantalate photonic integrated circuits for volume manufacturing

AC-Driven Aptamer-Decorated Graphene FET for Cortisol Detection

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Power Aware Placement of On-Chip Voltage Regulators

Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves)

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Spiropyran-based supramolecular elastomers with tuneable mechanical properties and switchable dielectric permittivity

Controlling On-Surface Photoactivity: The Impact of π-Conjugation in Anhydride-Functionalized Molecules on a Semiconductor Surface

Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

3D Printing of Customizable Transient Bioelectronics and Sensors

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Electronic metadevices for terahertz applications