Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?

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This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...

Non-Volatile Memory (NVM) is an emerging type of memory device that provides fast, byte-addressable, and high-capacity durable storage. NVM sits on the memory bus and allows durable data structures designs similar to the in-memory equivalent ones. Expensiv ...

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Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?

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Synthesis, structural and magnetic characterization of thin films of the chiral magnets CoZnMn and FeGe

TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

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Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments