Publications related to Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs

Related publications (33)

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Superconductive Electronics: A 25-Year Review

Giovanni De Micheli, Rassul Bairamkulov

The challenges of conventional semiconducting electronics, such as dark silicon, memory wall, and stagnant clock frequency motivate the search for alternative computing technologies. Superconductive electronics (SCE) represents one of the most advanced bey ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Hybrid Simulator for Capturing Dynamics of Synthetic Populations

Michel Bierlaire, Marija Kukic

This paper presents a novel hybrid framework for generating and updating a synthetic population. We call it hybrid because it combines model-based and data-driven approaches. Existing generators produce a snapshot of synthetic data that becomes outdated ov ...

IEEE2024

3D Printing of Customizable Transient Bioelectronics and Sensors

Danick Briand, Nicolas Francis Fumeaux

Transient electronics have emerged as a new category of devices that can degrade after their functional lifetime, offering tremendous potential as disposable sensors, actuators, wearables, and implants. Additive manufacturing methods represent a promising ...

2024

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Andras Kis, Oleg Yazyev, Ahmet Avsar, Zhenyu Wang, Yanfei Zhao, Mukesh Kumar Tripathi, Kristians Cernevics, Juan Francisco Gonzalez Marin, Cheol Yeon Cheon, Hyungoo Ji

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Nature Research2023

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Matteo Cucchi

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

WILEY-V C H VERLAG GMBH2023

Pipelined Architecture for Soft-Decision Iterative Projection Aggregation Decoding for RM Codes

Alexios Konstantinos Balatsoukas Stimming, Yuqing Ren

The recently proposed recursive projection-aggregation (RPA) decoding algorithm for Reed-Muller codes has received significant attention as it provides near-ML decoding performance at reasonable complexity for short codes. However, its complicated structur ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

In Liquido Computation with Electrochemical Transistors and Mixed Conductors for Intelligent Bioelectronics

Matteo Cucchi

Next-generation implantable computational devices require long-term-stable electronic components capable of operating in, and interacting with, electrolytic surroundings without being damaged. Organic electrochemical transistors (OECTs) emerged as fitting ...

Wiley-V C H Verlag Gmbh2023

Efficient Cu2O Photocathodes for Aqueous Photoelectrochemical CO2 Reduction to Formate and Syngas

Michael Graetzel, Shaik Mohammed Zakeeruddin, Kevin Sivula, Mounir Driss Mensi, Dan Ren, Yongpeng Liu, Jing Gao, Linfeng Pan, Jun Li, Meng Xia

Photoelectrochemical carbon dioxide reduction (PEC-CO2R) represents a promising approach for producing renewable fuels and chemicals using solar energy. However, attaining even modest solar-to-fuel (STF) conversion efficiency often necessitates the use of ...

Amer Chemical Soc2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Thomas Hagger, Anna Fontcuberta i Morral, Andrea Giunto

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Farzan Jazaeri

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

PERGAMON-ELSEVIER SCIENCE LTD2023

An Efficient Threshold Access-Structure for RLWE-Based Multiparty Homomorphic Encryption

Jean-Pierre Hubaux, Christian Vincent Mouchet

We propose and implement a multiparty homomorphic encryption (MHE) scheme with a t-out-of -N-threshold access-structure that is efficient and does not require a trusted dealer in the common random string model. We construct this scheme from the ring-learni ...

SPRINGER2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Nano-MOSFET - Foundation of Quantum Computing Part I

Edoardo Charbon

As big strides were being made in many science fields in the 1970s and 80s, faster computation for solving problems in molecular biology, semiconductor technology, aeronautics, particle physics, etc., was at the forefront of research. Parallel and super-co ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Electrolyte engineering via ether solvent fluorination for developing stable non-aqueous lithium metal batteries

Mounir Driss Mensi

Fluorination of solvents, useful for non-aqueous lithium-based batteries, improves the electrochemical stability but decreases the ionic conductivity. Here, the authors report a targeted functionalization of an ether solvent to balance the electrolyte ioni ...

Nature Portfolio2023