EVAPORATION THROUGH SHADOW MASKS ON UNCONVENTIONAL SUBSTRATES

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Increased flexibility of patterning methods is important for the engineering of multimaterial and multifunctional nano/micro-electro-mechanical systems (NEMS/MEMS), such as polymer-based electronic and sensor devices, 3D microfluidic systems, and bio-analytical systems. Stencil lithography is a good candidate as it is a resistless, single step patterning method based on direct, local deposition of material on an arbitrary surface through a solid-state membrane, e.g. a 200-nm thick silicon nitride (SiN) memb

Three-dimensional (3D) electron microscopy (3DEM) aims at the determination of the spatial distribution of the Coulomb potential of macromolecular complexes. The 3D reconstruction of a macromolecule using single-particle techniques involves thousands of 2D projections. One of the key parameters required to perform such a 3D reconstruction is the orientation of each projection image as well as its in-plane orientation. This information is unknown experimentally and must be determined using image-processing t

We study the interfacial electronic properties of a model Si-SiO2-Si structure which is intended to simulate the substrate-oxide-polysilicon stack in metal-oxide-semiconductor devices. The structural properties of this model are shown to match closely those of the real system, as determined by a number of atomic-scale experimental probes. In particular, the model introduced here takes into account the disordered reconstruction at the Si-SiO2 interface, and the amorphous nature of the 2 nm thick oxide. For t

A novel Silicon Sacrificial Layer Dry Etching (SSLDE) technique using sputtered amorphous or LPCVD polycrystalline silicon as sacrificial layers and a dry fluorine-based (SF₆) plasma chemistry as releasing process is reported with a detailed experimental study of the release etching step. The process is capable of various applications in surface micromachining process, and can be applied in fabricating RF MEMS switches, tunable capacitors, high-Q suspended inductors and suspended-gate MOSFETs. The developed

We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of representative abrupt, defect-free, anion-terminated metal/III-V interfaces. Namely, we focused on Al contacts to GaAs(001), AlAs(001) and cubic GaN(001) as well as on Al, Au and Cu junctions to cubic GaN(001). Recent advances in Schottky barrier concepts emp

We present an augmented reality system that relies on purely passive techniques to solve the real-time registration problem. It can run on a portable PC and does not require engineering of the environment, for example by adding markers. To achieve this result, we have integrated robust computer vision techniques into a powerful VR framework. The resulting AR system allows us to produce complex rendering and animation of virtual human characters, and to blend them into the real world. The system tracks the 3

This invention relates to a device for emitting addressable locations comprises parallel spaced-apart first conductors (10) intersecting with parallel spaced-apart second conductors (11). The intersecting first and second conductors define addressable locations where electrons (12) are emitted in response to the application of an energizing voltage. One face of the first conductors is covered with an insulating layer (13) against which the second conductors (11) are applied, this insulating layer (13) formi

We show that resonant coupling of synchrotron beams into suitable nanostructures can be used for the generation of coherent x-ray point sources. A two-dimensionally confining x-ray waveguide structure has been fabricated by e-beam lithography. By shining a parallel undulator beam onto the structure, a discrete set of resonant modes can be excited in the dielectric cavity, depending on the two orthogonal coupling angles between the beam and the waveguide interfaces. The resonant excitation of the modes is ev

Ferroelectric thin films for memory and MEMS applications require noble metal or refractory metal oxide electrodes. In this paper, physical and chemical parameters during etching of RuO2 and Pr by a dual frequency ECR/RF reactor have been investigated. The removal characteristics of blanket films and films with a patterned mask (photoresist or SiO2 masks) were investigated as a function of gas chemistry (Ar, O-2, halogen gases), ion beam energy (ion extraction/acceleration voltages), substrate bias RF power

We present a photoemission spectroscopy study of As-rich n-GaAs(001) surface modified by the deposition of an undoped silicon overlayer with thickness quite narrowly covering the interval from similar to 4 to 25 Angstrom. We observed a nonmonotonic relation between the surface band bending and Si overlayer thickness with the lowest surface potential at about 10-Angstrom-thick silicon overlayer. The valence band spectra inspection reveals the double leading edge incidental to alignment of the valence band ed

Ferroelectric thin films for memory and MEMS applications require noble metal or refractory metal oxide electrodes. In this paper, physical and chemical mechanisms during platinum etching by a dual frequency ECR/RF reactor have been investigated. An ion beam was generated by means of a 50 mm diameter ECR-gun directed towards the substrate. The latter was placed on a RF powered electrode for discharging and local activation of reactive gas species. The removal characteristics of blanket platinum films and pl

EVAPORATION THROUGH SHADOW MASKS ON UNCONVENTIONAL SUBSTRATES

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Characterisation and applications of stencil lithography

A Multiresolution Approach to Orientation Assignment in 3D Electron Microscopy of Single Particles

Electronic structure at realistic Si(100)-SiO2 interfaces

Silicon sacrificial layer dry etching (SSLDE) for free-standing RF MEMS architectures

Ab initio study of interface states at metal contacts to III-IV semiconductors

Stable Real-Time Interaction Between Virtual Humans and Real Scenes

Nanomechanical structure can be made without lithography

Hot electron emission array for e-beam photolithography and display screens

Two-dimensional x-ray waveguides and point sources

Etching of RuO2 and Pt thin films with ECR/RF reactor

Unpinning of the Au/GaAs interfacial Fermi level by means of ultrathin undoped silicon interlayer inclusion

Etching of platinum thin films with dual frequency ECR/RF reactor