Publication

Silicon sacrificial layer dry etching (SSLDE) for free-standing RF MEMS architectures

Mihai Adrian Ionescu, Philippe Renaud, Cyrille Hibert, Philippe Flückiger, Raphaël Fritschi
2003
Conference Papers

Abstract

A novel Silicon Sacrificial Layer Dry Etching (SSLDE) technique using sputtered amorphous or LPCVD polycrystalline silicon as sacrificial layers and a dry fluorine-based (SF₆) plasma chemistry as releasing process is reported with a detailed experimental study of the release etching step. The process is capable of various applications in surface micromachining process, and can be applied in fabricating RF MEMS switches, tunable capacitors, high-Q suspended inductors and suspended-gate MOSFETs. The developed SSLDE process can release metal suspended beams and membranes with excellent performance in terms of etch rate (up to 15um/min), Si:SiO2 selectivity and is fully compatible with standard MEMS processing equipment and CMOS post-processing.

Official source

https://infoscience.epfl.ch/entities/publication/6b3abd84-387d-4070-b7e4-de7431c243ce

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Mihai Adrian Ionescu, Philippe Renaud, Cyrille Hibert, Philippe Flückiger, Raphaël Fritschi
2003
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/6b3abd84-387d-4070-b7e4-de7431c243ce

About this result

Related concepts (32)

MEMS

MEMS (Microelectromechanical systems) is the technology of microscopic devices incorporating both electronic and moving parts. MEMS are made up of components between 1 and 100 micrometres in size (i.e., 0.001 to 0.1 mm), and MEMS devices generally range in size from 20 micrometres to a millimetre (i.e., 0.02 to 1.0 mm), although components arranged in arrays (e.g., digital micromirror devices) can be more than 1000 mm2.

Plasma etching

Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be either charged (ions) or neutral (atoms and radicals). During the process, the plasma generates volatile etch products at room temperature from the chemical reactions between the elements of the material etched and the reactive species generated by the plasma.

Photolithography

In integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over a substrate, such as a silicon wafer, to protect selected areas of it during subsequent etching, deposition, or implantation operations. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical (photoresist) coated on the substrate.

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Silicon sacrificial layer dry etching (SSLDE) for free-standing RF MEMS architectures

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