Publications related to Nanowire junctionless ISFET noise model in Verilog-A

Related publications (9)

Stencil-Based Selective Surface Functionalization of Silicon Nanowires in 3D Device Architectures for Next-Generation Biochemical Sensors

Surface functionalization of 1D materials such as silicon nanowires is a critical preparation technology for biochemical sensing. However, existing nonselective functionalization techniques result in nonlocal binding and contamination, with potential devic ...

Amer Chemical Soc2024

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Gennaro Termo, Jean-Michel Sallese, Adil Koukab

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023

An active charge balancing method suitable for integration in the output-stage of electrical neural stimulators

Alexandre Schmid

This paper presents a charge controlling circuit technique to integrate a charge balancer circuitry in the output-stage of electrical neural stimulators with the aim to reduce the area and the power consumption of the charge balancing circuitry. The propos ...

SPRINGER2022

Logic-in-memory based on an atomically thin semiconductor

Aleksandra Radenovic, Andras Kis, Ahmet Avsar, Zhenyu Wang, Yanfei Zhao, Mukesh Kumar Tripathi, Guilherme Migliato Marega

The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-me ...

2020

1GigaRad TID impact on 28 nm HEP analog circuits

Christian Enz

An in-depth analysis of modern technologies could represent the base for the success of the High Luminosity Large Hadron Collider experiments. The requirement is a new reliable electronics in 1Grad-TID environments. For the purpose, single devices in TSMC ...

ELSEVIER SCIENCE BV2018

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Anna Fontcuberta i Morral, Federico Matteini, Sonia Conesa Boj, Francesca Amaduzzi, Alberto Casadei, Fauzia Jabeen

Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...

American Chemical Society2015

A correlated multiple sampling passive switched capacitor circuit for low light CMOS image sensors

Christian Enz, Assim Boukhayma

After a brief review of the principle of correlated multiple sampling (CMS) and its implementation techniques in CIS readout chains, a simple CMS passive circuit that (i) requires no additional active circuitry, (ii) has no impact on the output dynamic ran ...

IEEE2015

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Livio Lattanzio

We report a novel device which exploits the internally combined quantum mechanical Band-To-Band and Barrier Tunneling mechanisms to achieve improved performances and overcome the intrinsic low current drive limitations of conventional Tunnel FETs and the 6 ...

IEEE2010

Power-Performance Scalable Integrated Circuit Design Using Subthreshold MOS

Seyed Armin Tajalli

The potentials of subthreshold metal-oxide-semiconductor (MOS) solid-state devices for implementing widely adjustable performance integrated circuits with very low power consumption have been investigated. The main concentration of this work is developing ...

EPFL2010