High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

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This dataset accompanies the publication "Distinguishing Inner and Outer-Sphere Hot Electron Transfer in Au/p-GaN Photocathodes" published in Nano Letters. The data can be used to reproduce the original plots in figures 2-4 in the main text and all origina ...

Electrically connected and plasmonically enhanced molecular junctions combine the optical functionalities of high field confinement and enhancement (cavity function), and of high radiative efficiency (antenna function) with the electrical functionalities o ...

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

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We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

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The pyroresistive response of conductive polymer composites (CPCs) has attracted much interest because of its potential applications in many electronic devices requiring a significant responsiveness to changes in external physical parameters such as temper ...

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A modular multiple frequency coils inductive link system to wirelessly provide power for at least a medical implant at an output of a receiving coil, whereby the receiving coil is configured to be implanted in an organism. The modular multiple frequency co ...

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We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

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Dataset to accompany publication "Distinguishing Inner and Outer-Sphere Hot Electron Transfer in Au/p-GaN Photocathodes"

Light Emission and Conductance Fluctuations in Electrically Driven and Plasmonically Enhanced Molecular Junctions

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Filiform Variable Stiffness Technologies for Medical Robotics

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Pyroresistive response of percolating conductive polymer composites

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

A modular multiple frequency inductive link to wirelessly power multiple miniaturized implants

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Plasmonically enhanced molecular junctions for investigation of atomic-scale fluctuations in self-assembled monolayers

Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

A 69 µm2 Sub-nW/kHz Capacitor-less Ring Oscillator for Ultra-Miniaturized Implants

Integrated Electronics for Deep Implants to Remotely Monitor Hemodynamics

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Power Aware Placement of On-Chip Voltage Regulators

Layered metals as polarized transparent conductors

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP