Publication

Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs

Jean-Michel Sallese, Farzan Jazaeri
2015
Journal Articles

Abstract

This paper presents analytical expressions for channel noise, induced gate noise (IGN), and cross-correlation noise in a long-channel junctionless (JL) double-gate MOSFET. The analytical relationships, which have been derived from a coherent charge-based model, are validated with technology computer-aided design simulations, and the figures of merit have been compared with the inversion mode FETs. For a given current, we found that the channel thermal noise is very similar for both architectures, whereas the IGN is slightly decreased in the JL FETs.

Official source

https://infoscience.epfl.ch/entities/publication/5a07427c-aa32-4cc3-be41-d4b6dd1fa3ff

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Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs

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