Electrical properties of La2O3 and HfO2/La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

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Electrical properties of La2O3 and HfO2/La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

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Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

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