Publication

Indium Distribution in Ingaas Quantum Wires Observed with the Scanning Tunneling Microscope

François Morier-Genoud, Denis Martin
1995
Journal Articles

Abstract

The incorporation of In in the growth of crescent-shaped In0.12Ga0.88As quantum wires embedded in (AlAs)(4)(GaAs)(8) superlattice barriers is studied in atomic detail using cross-sectional scanning tunneling microscopy. It is found that the In distribution in both the surface and the first subsurface layer can be atomically resolved in the empty- and filled-state images, respectively. Strong In segregation is seen at the InGaAs/GaAs interfaces, but neither an expected enhancement of the In concentration at the center of the quantum wire compared to the planar quantum well nor In clustering beyond the statistical expectation is observed. (C) 1995 American Institute of Physics.

Official source

https://infoscience.epfl.ch/entities/publication/5481c7df-b3dd-47c5-8679-371a40faae17

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

François Morier-Genoud, Denis Martin
1995
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/5481c7df-b3dd-47c5-8679-371a40faae17

About this result

Related concepts (32)

Quantum dot

Quantum dots (QDs) – also called semiconductor nanocrystals, are semiconductor particles a few nanometres in size, having optical and electronic properties that differ from those of larger particles as a result of quantum mechanics. They are a central topic in nanotechnology and materials science. When the quantum dots are illuminated by UV light, an electron in the quantum dot can be excited to a state of higher energy. In the case of a semiconducting quantum dot, this process corresponds to the transition of an electron from the valence band to the conductance band.

Quantum well

A quantum well is a potential well with only discrete energy values. The classic model used to demonstrate a quantum well is to confine particles, which were initially free to move in three dimensions, to two dimensions, by forcing them to occupy a planar region. The effects of quantum confinement take place when the quantum well thickness becomes comparable to the de Broglie wavelength of the carriers (generally electrons and holes), leading to energy levels called "energy subbands", i.e.

Scanning tunneling microscope

A scanning tunneling microscope (STM) is a type of microscope used for imaging surfaces at the atomic level. Its development in 1981 earned its inventors, Gerd Binnig and Heinrich Rohrer, then at IBM Zürich, the Nobel Prize in Physics in 1986. STM senses the surface by using an extremely sharp conducting tip that can distinguish features smaller than 0.1 nm with a 0.01 nm (10 pm) depth resolution. This means that individual atoms can routinely be imaged and manipulated.

Related publications (21)

Indium Distribution in Ingaas Quantum Wires Observed with the Scanning Tunneling Microscope

Chat with Graph Search

A Comprehensive Analysis of Combined AFM/SEM Systems for In-Situ Nanoscale Characterizations and Multiparametric Correlative Microscopy

Separate-scan atomic force microscope for fast infrared scattering-type scanning near-field optical microscope

Roadmap on Atomically-engineered Quantum Platforms