Publication

Internal Photoemission-Studies of Artificial Band Discontinuities at Buried Gaas(100) Gaas(100) Homojunctions

Giorgio Margaritondo
1994
Journal Articles

Abstract

Internal photoemission phototransport measurements revealed 0.27+/-0.04 eV conduction- and valence-band discontinuities induced by a Si intralayer at p-GaAs(100)/n-GaAs(100) homojunctions. The interface dipole originating from the heterovalent character of the Si-GaAs bonds raises the bands of the GaAs overlayer above that of the GaAs subtrate.

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Internal Photoemission-Studies of Artificial Band Discontinuities at Buried Gaas(100) Gaas(100) Homojunctions

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