Narrow inhomogeneous broadening of V-groove quantum wires grown on vicinal substrates

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...

The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection ...

With the rise of quantum computing and recent experiments into topological quantum computers come exciting new opportunities for III-V semiconductor quantum nanostructures. In this thesis, we explore the scalable fabrication of patterned arrays and branche ...

Zinc phosphide (Zn3P2) is a compound semiconductor based on earth-abundant elements with functional properties ideal for solar cell applications. Cheap, abundant, and renewable energy sources are increasingly imperative due to the imminent threat posed by ...

Earth-abundant semiconducting materials are a potential solution for large-scale deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth-abundant material with optoelectronic properties suitable for photovoltaics. Herein, we rep ...

The nature of the liquid-solid interface determines the characteristics of a variety of physical phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the established models for crystal growth are based on macroscopic t ...

Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of ...

This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...

We present a comprehensive study of AlN growth on Si(111) substrate by gas source molecular beam epitaxy with ammonia as nitrogen precursor in the high temperature range. We first demonstrate that the observation of the silicon 7 x 7 surface reconstruction ...

We report a numerical and experimental investigation of fabrication tolerances and outcoupling in optically pumped III-nitride nanolasers operating near lambda = 460 nm, in which feedback is provided by a one-dimensional photonic crystal nanobeam cavity an ...

Quasi-one-dimensional AlGaAs quantum wires (QWRs) with parabolic heterostructure profiles along their axis were fabricated using metallorganic vapor phase epitaxy (MOVPE) On patterned (111)B GaAs substrates. Tailoring of the confined electronic states via ...

Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces ...

The fabrication and characterization of site-controlled InGaAs/GaAs quantum dots (QDs) made by MOVPE using triethylgallium (TEGa) on patterned {111}B GaAs substrates are reported. Results are compared to more traditional pyramidal QD structures grown emplo ...

We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As-4 re-emission and shadowing in the growth rate of the structures. The highest aspect ratio structures are o ...

Metamorphic InxAl1-xAs buffer design features influence on electrophysical and structural properties of the heterostructures was investigated. Two types of MHEMT heterostructures In0.70Al0.30As/In0.76Ga0.24As with novel design contained inverse steps or st ...

The properties of semiconductors heterostructures of nanoscopic dimensions change from that of bulk material according to the rules of quantum mechanics. The planar quantum wells (QWs) are widely used in various diode and laser devices thanks to the relati ...

The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. In the first paper (part I), we address the morphology of the crack field induced by different types of indenters by means of in situ n ...

Narrow inhomogeneous broadening of V-groove quantum wires grown on vicinal substrates

Chat with Graph Search

Scalable Approaches to III-V Nanowires for Photodetection

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Zn3P2 as an earth-abundant photovoltaic material: from growth to device

Nanopillars Enabling III-V Integration on Si (100) and (111)

Laser soliton microcombs heterogeneously integrated on silicon

Scalable Nanowire Networks: Growth and Functionality

Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting

van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics

3D Ordering at the Liquid-Solid Polar Interface of Nanowires

Template-Assisted Scalable Nanowire Networks

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range

Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation)

Parabolic tailored-potential quantum-wires grown in inverted pyramids

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Site-controlled InGaAs/GaAs pyramidal quantum dots grown by MOVPE on patterned substrates using triethylgallium

Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer

Dilute-Nitride Low-Dimensional Nanostructures Formed on Non-Planar Substrates

Nanoindentation cracking in gallium arsenide: Part II. TEM investigation