Publication

Site-controlled InGaAs/GaAs pyramidal quantum dots grown by MOVPE on patterned substrates using triethylgallium

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Pascal Gallo, Alexey Lyasota, Clément William Tendaï Jarlov, Bruno Marie Dominique Rigal
2015
Journal Articles

Abstract

The fabrication and characterization of site-controlled InGaAs/GaAs quantum dots (QDs) made by MOVPE using triethylgallium (TEGa) on patterned {111}B GaAs substrates are reported. Results are compared to more traditional pyramidal QD structures grown employing trimethylgallium (TMGa). Several potential advantages of the use of TEGa are demonstrated, including more reproducible achievement of QD transitions with narrow (< 100 mu eV) linewidths and better spectral uniformity across patterned substrates. These features are important for QD integration in optical cavities, which require both site and spectral stringent control. (C) 2014 Elsevier B.V. All rights reserved.

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https://infoscience.epfl.ch/entities/publication/6a87b4f7-86f8-4619-adb1-58088a5d621d

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Elyahou Kapon, Alok Rudra, Benjamin Dwir, Pascal Gallo, Alexey Lyasota, Clément William Tendaï Jarlov, Bruno Marie Dominique Rigal
2015
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/6a87b4f7-86f8-4619-adb1-58088a5d621d

About this result

Related concepts (10)

Quantum dot

Quantum dots (QDs) – also called semiconductor nanocrystals, are semiconductor particles a few nanometres in size, having optical and electronic properties that differ from those of larger particles as a result of quantum mechanics. They are a central topic in nanotechnology and materials science. When the quantum dots are illuminated by UV light, an electron in the quantum dot can be excited to a state of higher energy. In the case of a semiconducting quantum dot, this process corresponds to the transition of an electron from the valence band to the conductance band.

Gallium arsenide

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.

Indium gallium arsenide

Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.

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