Optical sensor using a floating body SOI MOSFET in the Delta-sigma loop

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Recent results with radiation-tolerant TowerJazz 180 nm MALTA sensors

Francesco Piro

To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that ...

ELSEVIER2022

An Energy-Efficient Bridge-to-Digital Converter for Implantable Pressure Monitoring Systems

Marco Mattavelli, Catherine Dehollain, Franco Maloberti, Diego Ruben Barrettino, Kerim Türe, Mustafa Besirli

This paper presents an energy-efficient, duty-cycled, and spinning excitation bridge-to-digital converter (BDC) designed for implantable pressure sensing systems. The circuit provides the measure of the pulmonary artery pressure that is particularly releva ...

2022

Medipix4, a high granularity four sides buttable pixel readout chip for high resolution spectroscopic X-ray imaging at rates compatible with medical CT scans

Viros Sriskaran

Medipix4 is the latest member in the Medipix/Timepix family of pixel detector chips aimed at high rate spectroscopic X-ray imaging using high-Z materials. The chip address the limitations of conventional hybrid pixel detectors for X-ray imaging. Its predec ...

EPFL2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Aleksandra Radenovic, Andras Kis, Zhenyu Wang, Mukesh Kumar Tripathi, Guilherme Migliato Marega

Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn and infer from data generated by smart sensors and other devices for the Internet of Things. The next leap toward ubiquitous electron ...

2022

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

Mihai Adrian Ionescu, Shokoofeh Sheibani

Fluoxetine (FL) is one of the selective serotonin reuptake inhibitors, which is used as an anti-depressant, as well as anti-panic drug. In this work, a sensor for label-free recognition of trace amounts of FL is introduced, which is based on an extended ga ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Pixel super-resolution with spatially entangled photons

Edoardo Charbon, Jiuxuan Zhao

Pixelation is common in quantum imaging systems and limit the image spatial resolution. Here, the authors introduce a pixel super-resolution approach based on measuring the full spatially-resolved joint probability distribution of spatially-entangled photo ...

Nature Portfolio2022

Asynchrony Increases Efficiency: Time Encoding of Videos and Low-Rank Signals

Martin Vetterli, Adam James Scholefield, Karen Adam

In event-based sensing, many sensors independently and asynchronously emit events when there is a change in their input. Event-based sensing can present significant improvements in power efficiency when compared to traditional sampling, because (1) the out ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

High-Performance CMOS SPAD-Based Sensors for Time-of-Flight PET Applications

Francesco Gramuglia

Detecting light, photon by photon, has been possible since the 1930s, with the invention of the photomultiplier tube (PMT). However, it is only since the 1970s, that solid-state single-photon detectors have emerged and only since 2003 that a new technology ...

EPFL2022

Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

A Delta Sigma-Modulated Sample and Average Common-Mode Feedback Technique for Capacitively Coupled Amplifiers in a 192-nW Acoustic Analog Front-End

Kyojin Choo

This work presents an acoustic analog front-end based on a delta sigma-modulated sample and average common-mode feedback technique. The proposed feedback offers a process and temperature stable high pass (HP) frequency corner, unity dc feedback gain, and a ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

An All-Digital 1.25 Mbps 5-Subcarrier OFDM Backscatter Uplink with Delta-Sigma Modulation for Improved Spurious-Free Dynamic Range

James Daniel Rosenthal

This paper describes an all-digital backscatter modulation approach leveraging delta-sigma modulation (DSM) to improve the in-channel spectral characteristics of orthogonal frequency division multiplexed (OFDM) backscatter communication. We demonstrate thr ...

IEEE2022