Publication

Effect of Nb-donor and Fe-acceptor dopants in (Bi1/2Na1/2)TiO3–BaTiO3–(K0.5Na0.5)NbO3 lead-free piezoceramics

Dragan Damjanovic
2010
Journal Articles

Abstract

The role of Fe as an acceptor and Nb as a donor in 0.94−xTiO3–0.06BaTiO3−x (K0.5Na0.5)NbO3 (100xKNN) (x = 0.02 and 0.03) lead-free piezoceramics was investigated. X-ray diffraction analyses show that all the profiles are best-fitted with a cubic symmetry where Fe doping tends to induce a lattice expansion, while Nb doping does the opposite. The strain and polarization characteristics are enhanced and suppressed by the acceptor and donor dopants, respectively. The improvement in the electrical properties with acceptor doping is accompanied by the stabilization of a ferroelectric order. Electron paramagnetic resonance spectroscopic analysis suggests that the stabilization of the ferroelectric order by the Fe dopant originates from the formation of (FeTi′–VO••)• defect dipoles.

Official source

https://infoscience.epfl.ch/entities/publication/4d8289d2-cecb-4a85-8076-ad51c4a01bb8

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Dragan Damjanovic
2010
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/4d8289d2-cecb-4a85-8076-ad51c4a01bb8

About this result

Related concepts (28)

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

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