Epitaxial growth of (SrBa)Nb2O6 thin films on SrTiO3 single crystal substrate

Nava Setter, Paul Muralt, Marco Cantoni, Anna Infortuna
2006
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Nava Setter, Paul Muralt, Marco Cantoni, Anna Infortuna
2006
Journal Articles

Official source

Related publications (3)

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Related publications (3)

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Eleonora Russo, Heidi Andrea Potts, Federico Matteini, Sonia Conesa Boj, Jelena Vukajlovic Plestina, Anna Dalmau Mallorquí

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

American Chemical Society2015

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Gatien Cosendey

Thanks to its high refractive index contrast, band gap, and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diod ...

Amer Inst Physics2013

Gold-Free GaAs Nanowire Synthesis and Optical Properties

Anna Fontcuberta i Morral

To date, the use of gold for the synthesis of nanowires has proven to be nearly impossible to circumvent, regardless of the potential negative effects on the nanowires physical properties. In this paper, the synthesis of gallium arsenide nanowires without ...

Institute of Electrical and Electronics Engineers2011