Glass for photonics: insight in the glass properties obtained under laser fs writing via point defects analysis

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Nickel-aluminium intermetallics constitute interesting systems for the study of irradiation-induced phase transformations (order → disorder, amorphization) and production of defects. Irradiation of ordered intermetallics may induce disorder or amorphization depending on the projectile characteristics, irradiation conditions and chemical and physical properties of the target. The behavior of the various intermetallic compounds of the nickel-aluminium system with respect to electron and ion irradiation has be

Predicting microstructure evolution of metals under irradiation requires an in depth understanding of the production and properties of point defects and their clusters. Although, analytical descriptions based on the production bias model have recently been applied successfully to explain the behaviour of metals under different irradiation conditions, they still lack an important ingredient, namely that of the diffusion mechanism of the defects produced. In the present investigation, a hierarchical computer

Crystalline diamond coatings and, increasingly, diamond-like amorphous carbon (DLC) films are used for tribological and protective layers for their hardness and chemical inertness. They are also under investigation for their electron emitting properties, with possible applications in field emission displays. In this study, hydrogen-free DLC films were deposited by laser ablation using a KrF excimer laser and fluences between 0.5 and 2 J/cm(2). Information about the disorder and short range order in the film

We use molecular dynamics to analyze the dependence on the impact angle of the distribution of defects originated by the deposition of a Ag/sub 19/ cluster on Pd(100) at initial kinetic energies 0.1, 2, 20 and 95 eV. For increasing energy the cluster undergoes a transition from a multi-layered adsorbed structure to a two-dimensional one. Implantation of Ag atoms and promotion of Pd substrate atoms is common to all energies and angles and, for a given initial total kinetic energy, it increases with decreasin

Mass selected Ag/sub n/ clusters (n=1,7,19) from a secondary ion source have been deposited onto a Pt(111) substrate at low temperature. The surface and resulting cluster morphology have subsequently been characterized within the same UHV chamber by variable temperature STM as a function of cluster size, kinetic impact energy, and substrate temperature. The kinetic energy per cluster atom was found to be the decisive parameter for a controlled deposition. Noble gas buffer layers ( approximately=10 ML Ar), w

Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection in the near infrared. We have studied the formation of thin platinum silicide films and their electrical properties as a function of the annealing temperature in presence of an interfacial native silicon oxide layer and with plasma etching damage on the Si

Fiber optic modulators were fabricated by coating optical fibers with electrode and piezoelectric ZnO layers. The techniques of piezoelectric fiber optic modulator (PFOM) fabrication are presented, and the microstructure and crystallographic texture of the coatings are analyzed, Ln order to produce thick (approximately 5 mu m) ZnO coatings, it was necessary to study the reactive de magnetron sputtering process in O-2/Ar gas mixtures under conditions close to the transition between an oxidized and nonoxidize

The paper reviews different aspects of deposition, integration, and device fabrication of PbZrxTi1-xO3 (PZT) films for application in micromechanical systems. The deposition of such films and the principal processes for their integration onto silicon substrates are now fairly well mastered. Current efforts concentrate on tailoring the film properties for the various applications, and on optimization of the device designs and patterning processes. Current work on an ultrasonic micromotor and a pyroelectric I

The in-situ growth of PbZrxTi1-xO3 (PZT) and PbTiO3 (PT) thin films by reactive sputter deposition has been investigated for applications with silicon substrates. In-situ deposition from three simultaneously operating magnetron sources was applied. At the selected growth temperature range (550-600 degrees C), self-stabilisation of lead composition by a lar ge desorption rate of Pb on stoichiometric PZT surfaces has been observed. Interlayer mixing was found to be limited to a few monolayers. Both Pt and RuO

Electronic device-quality Cu was deposited on Pt-patterned oxidized Si wafers from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane by using low-pressure chem. vapor deposition at 150-250 Deg in He carrier gas. Smooth Cu films ?0.8 mm thick have been deposited with an elec. resistivity close to that of bulk Cu. From the temp. dependence of the mean deposition rate, an apparent activation energy of 53-62 kJ/mol was detd. for the overall deposition process. Monitoring of the deposition process by refl

The in-situ reactive sputter deposition of PbTiO3 on Pt/Ti/SiO2/Si from two metallic targets was investigated. A minimal lead oxide flux of two to three times the titanium oxide flux is needed in order to obtain stoichiometric films with the perovskite structure. For higher fluxes, the Pb/Ti ratio in the film stays at the stoichiometric value 1; the orientation changes from random to ; and the film morphology transforms from a rough to a smooth polycrystalline film. The obtained dielectric constants va

The low pressure chem. vapor deposition (LPCVD) of Cu from its bis-hexafluoroacetylacetonate was studied on oxidized Si substrates partially covered with a Pt seeding layer. With a known concn. of water vapor in the gas mixt., almost equal Cu film growth rates were obtained when using either H or He as carrier gas. For both carrier gases, an increase of the Cu growth rate was obsd. with an increasing amt. of water vapor added to the gas mixt., and deposition rates above 500 .ANG./min were obtained. The chem

Glass for photonics: insight in the glass properties obtained under laser fs writing via point defects analysis

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The order-disorder transformation and microstructure evolution in nickel-aluminium intermetallics after heavy-ion irradiation

Defect production and damage evolution in Al: a molecular dynamics and Monte Carlo computer simulation

Characterization of diamond-like carbon by Raman spectroscopy, XPS and optical constants

Angle dependence and defect production in metal-on-metal cluster deposition on surfaces

Hard and soft landing of mass selected Ag clusters on Pt(111)

Formation and properties of nanometer-thick platinum silicide layers

Fabrication and structural analysis of ZnO coated fiber optic phase modulators

PZT thin films for micro sensors and actuators

In-situ sputter deposition of PT and PZT films on platinum and RuO2 electrodes

Selectivity in low pressure chemical vapor deposition of copper from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane in the presence of water

In-Situ Thin Film Growth of PbTiO3 By Multi Target Sputtering

Selective low pressure chemical vapor deposition of copper: effect of added water vapor in hydrogen or helium carrier gas