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In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...
Institute of Electrical and Electronics Engineers2019
This letter presents a CMOS-compatible photodetector displaying direct light-to-time conversion and intrinsic charge integration with a very low dark current. This device is particularly adapted for applications requiring high sensitivity such as biolumine ...
Institute of Electrical and Electronics Engineers2014
This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at least 0.2 eV band-gap shrinkage at the B ...
