Publications related to Reverse Vgs Static CMOS (RVGS-SCMOS); A New Technique for Dynamically Compensating the Process Variations in Sub-threshold Designs

Related publications (5)

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Riyaz Mohammed Abdul Khadar, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

MOS-PN Hybrid Device With Minimum Dark Current for Sensitive Digital Photodetection

Maher Kayal, Adil Koukab, Denis Sallin

This letter presents a CMOS-compatible photodetector displaying direct light-to-time conversion and intrinsic charge integration with a very low dark current. This device is particularly adapted for applications requiring high sensitivity such as biolumine ...

Institute of Electrical and Electronics Engineers2014

Asymmetrically strained all-silicon multi-gate n-Tunnel FETs

Mihai Adrian Ionescu, Mohammad Najmzadeh, Katherine Boucart

This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at least 0.2 eV band-gap shrinkage at the B ...

Elsevier2010

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

Design considerations and performance of n(++) GaN/InAlN/AlN/GaN normally off high-electron mobility transistors (HEMTs) are analyzed. Selective and damage-free dry etching of the gate recess through the GaN cap down to a 1-nm-thick InAlN barrier secures p ...

2010

Electron counting at room temperature in an avalanche bipolar transistor

Giovanni Boero, Radivoje Popovic, Marc Lany

We report on real-time detection of single electrons inside a n-p-n bipolar junction transistor at room temperature. Single electrons injected through the base-emitter junction trigger with a high probability the avalanche breakdown of the strongly reverse ...

2008