Exciton-polariton integrated circuits

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Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...

GaN-on-Si high-electron-mobility transistors (HEMTs) exhibit excellent properties for efficient power conversion. Nevertheless, a considerable energy loss associated with the charging and discharging of the output capacitance (COSS) in these transistors se ...

Recent research has reported an undesirable OFF-state loss in high-frequency soft-switching power converters, such as resonant converters. This loss is attributed to a hysteresis loss related to the charging-discharging process of the output capacitance of ...

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

The emergence of wide-band-gap (WBG) power transistors with low conduction losses and high-speed switching speeds has paved the way for more-than-ever efficient power electronics systems and huge energy saving potentials. Likewise, power density- the ratio ...

Emerging reconfigurable nanotechnologies allow the implementation of self-dual functions with a fewer number of transistors as compared to traditional CMOS technologies. To achieve better area results for Reconfigurable Field-Effect Transistors (RFET)-base ...

A cryogenic broadband low noise amplifier (LNA) for quantum applications based on a standard 40-nm CMOS technology is reported. The LNA specifications are derived from the readout of semiconductor quantum bits at 4.2 K, whose quantum information signals ar ...

Low ON-resistance of advanced superjunction (SJ) and GaN-on-Si transistors is of great importance in power converters, however, the anomalous loss in their output capacitance (C OSS ) severely limits their performance. In this work, we use an energy-orient ...

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

Exciton-polariton integrated circuits

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New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

A perspective on multi-channel technology for the next-generation of GaN power devices

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies

Preserving Self-Duality During Logic Synthesis for Emerging Reconfigurable Nanotechnologies

A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor