Dynamics of ferroelectric 180 degrees domain walls at engineered pinning centers

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Related publications (30)

Identifying and Tracking Defects in Dynamic Supramolecular Polymers

A central paradigm of self-assembly is to create ordered structures starting from molecular monomers that spontaneously recognize and interact with each other via noncovalent interactions. In recent years, great efforts have been directed toward perfecting ...

AMER CHEMICAL SOC2020

Structural and Dynamical Properties of Potassium Dodecahydro-monocarba-closo-dodecaborate: KCB11H12

Wei Zhou, Mirjana Dimitrievska

MCB11H12 (M: Li, Na) dodecahydro-monocarba-closo-dodecaborate salt compounds are known to have stellar superionic Li+ and Na+ conductivities in their high-temperature disordered phases, making them potentially appealing electrolytes in all-solid-state batt ...

AMER CHEMICAL SOC2020

Theoretical maximum photogeneration efficiency and performance characterization of InxGa1-xN/Si tandem water-splitting photoelectrodes

Yannick Kenneth Gaudy, Sophia Haussener

InxGa1-xN is a promising material for flexible and efficient water-splitting photoelectrodes since the bandgap is tunable by modifying the indium content. We investigate the potential of an InxGa1-xN/Si tandem used as a water-splitting photoelectrode. We p ...

2020

Probing magnetism in atomically thin semiconducting PtSe2

Andras Kis, Oleg Yazyev, Michele Pizzochero, Ahmet Avsar, Alberto Ciarrocchi, Cheol Yeon Cheon, Mukesh Kumar Tripathi

Atomic-scale disorder in two-dimensional transition metal dichalcogenides is often accompanied by local magnetic moments, which can conceivably induce long-range magnetic ordering into intrinsically non-magnetic materials. Here, we demonstrate the signatur ...

Nature Research2020

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in beta-Ga2O3

Alfredo Pasquarello, Assil Bouzid

Formation energies of C, Si, and Ge defects in beta-Ga2O3 are studied through hybrid functional calculations. The interstitial defects of these elements generally occur at higher energies than their substitutional counterparts, but are more stable at low F ...

WILEY-V C H VERLAG GMBH2019

Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency

Wei Liu, Wei Liu

Since the seminal report about the first Candela- class-brightness InGaN blue light- emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...

EPFL2019

Adjustable potential probes for band-gap predictions of extended systems through nonempirical hybrid functionals

Alfredo Pasquarello, Igor Reshetnyak, Thomas Bischoff

We describe a nonempirical procedure for achieving accurate band gaps of extended systems through the insertion of suitably defined potential probes. By enforcing Koopmans' condition on the resulting localized electronic states, we determine the optimal fr ...

2019

Synthesis of Cu/CeO2-x Nanocrystalline Heterodimers with Interfacial Active Sites To Promote CO2 Electroreduction

Mounir Driss Mensi, Emad Oveisi, Chethana Janardhana Gadiyar, Raffaella Buonsanti, Seyedehbehnaz Varandili, Jianfeng Huang, Michal Stanislaw Strach, Gian Luca De Gregorio, Jan Vávra

Synergistic effects at metal/metal oxide interfaces often give rise to highly active and selective catalytic motifs. So far, such interactions have been rarely explored to enhance the selectivity in the electrochemical CO2 reduction reaction (CO2RR). Herei ...

2019

Extrinsic Defects in Amorphous Oxides: Hydrogen, Carbon, and Nitrogen Impurities in Alumina

Alfredo Pasquarello, Zhendong Guo, Francesco Ambrosio

We present a procedure for addressing extrinsic defects in amorphous oxides, in which the most stable defect configurations are identified through ab initio molecular dynamics in various charge states and studied through hybrid functional calculations. The ...

American Physical Society (APS)2019

Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

Nicolas Bologna

III-V semiconductor nanowires are, due to their unique properties, one of the most promising nanostructures developed in the last decades. However, the realization of commercial devices made of III-V nanowires, such as transistors and solar cells, has not ...

EPFL2019

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