A 2.4-GHz low complexity polar transmitter using dynamic biasing for IEEE 802.15.6

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Related publications (29)

Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications

This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration of fast front-en ...

IOP Publishing Ltd2021

Cryogenic MOSFET Modeling for Large-Scale Quantum Computing

Arnout Lodewijk M Beckers

Promising results of state-of-the-art quantum computers fuel a world-wide effort in academic and private research laboratories to scale up the number of qubits and improve their characteristics in large arrays. To meet the scale-up challenge, innovative mi ...

EPFL2021

Blumino: The First Fully Integrated Analog SiPM With On-Chip Time Conversion

Edoardo Charbon, Andrei Ardelean, Andrada Alexandra Muntean, Esteban Venialgo Araujo, Emanuele Ripiccini

Blumino is the first analog silicon photomultiplier with integrated amplifier, comparator and time-to-digital converter (TDC). The combination of a photodetector together with on-chip readout circuitry enables system-level advantages, such as internal para ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Development of a Data Concentrator ASIC for the High Luminosity upgrade of the CMS Outer Tracker detector with tracking trigger

Simone Scarfì

With the increasing capabilities of the microelectronics technology, future particle detectors in high energy physics will be able to yield high-level features that are not only simple geometrical positions or energy measurement in the silicon sensors used ...

EPFL2021

High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits

Rui Ning Wang, Tobias Kippenberg, Junqiu Liu, Arslan Sajid Raja, Nils Johan Engelsen, Guanhao Huang, Jijun He, Tianyi Liu

Low-loss photonic integrated circuits and microresonators have enabled a wide range of applications, such as narrow-linewidth lasers and chip-scale frequency combs. To translate these into a widespread technology, attaining ultralow optical losses with est ...

Nature Research2021

Nanowatt Acoustic Inference Sensing Exploiting Nonlinear Analog Feature Extraction

Christian Enz, Minhao Yang, Jun Zhang

Ultralow-power sensing with inference functionality embedded in sensor nodes is essential for enabling the emerging pervasive intelligence. For acoustic inference sensing, the feature extraction can take advantage of power-efficient analog circuits. Howeve ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ming-Lo Wu

In this paper, we present the first CMOS SPAD with performance comparable or better than that of the best custom SPADs, to date. The SPAD-based design, fully integrated in 180 nm CMOS technology, achieves a peak PDP of 55% at 480nm with a very broad spectr ...

2022

Integration of MEMS in Silicon Photonics

Alain Yuji Takabayashi

Like integrated electronics, integrated photonics such as Silicon Photonics benefit from increased device-density on a single chip. Silicon is an excellent material for integrated photonics because its high refractive index allows devices to be made small, ...

EPFL2021

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