Publication

Kinetic Processes in Metal Epitaxy Studied with Variable-Temperature Stm - Ag/Pt(111)

Klaus Kern, Harald Brune
1995
Journal Articles

Abstract

Variable-temperature scanning tunneling microscopy has been applied to study kinetic processes involved in epitaxial growth. This paper concentrates on nucleation and aggregation of submonolayer Ag films on a Pt(lll) surface. From island density versus temperature data, the activation barrier for Ag adatom diffusion as well as the stability of adsorbed Ag dimers are determined. From the adsorbed aggregate shapes conclusions on Ag perimeter diffusion can be drawn. An anisotropy in edge diffusion leads to dendritic aggregates with the trigonal substrate symmetry. A crossover to randomly ramified fractals is observed upon lowering of the deposition flux.

Official source

https://infoscience.epfl.ch/entities/publication/3ef44cda-eae5-487d-9f5a-e2fcc9eb9024

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Klaus Kern, Harald Brune
1995
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/3ef44cda-eae5-487d-9f5a-e2fcc9eb9024

About this result

Related concepts (20)

Epitaxy

Epitaxy (prefix epi- means "on top of”) refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material.

Kinetic theory of gases

The kinetic theory of gases is a simple, historically significant classical model of the thermodynamic behavior of gases, with which many principal concepts of thermodynamics were established. The model describes a gas as a large number of identical submicroscopic particles (atoms or molecules), all of which are in constant, rapid, random motion. Their size is assumed to be much smaller than the average distance between the particles. The particles undergo random elastic collisions between themselves and with the enclosing walls of the container.

Sputter deposition

Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K).