Publications related to Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

Related publications (33)

A Versatile Approach to Stabilize Liquid-Liquid Interfaces using Surfactant Self-Assembly

Stabilizing liquid-liquid interfaces, whether between miscible or immiscible liquids, is crucial for a wide range of applications, including energy storage, microreactors, and biomimetic structures. In this study, a versatile approach for stabilizing the w ...

Wiley-V C H Verlag Gmbh2024

Plasmonic Nanostructures for Photocatalysis: Material, Photonic and Electronic Effects

Fateme Kiani Shahvandi

Plasmonic photochemistry has a large potential to replace energy-intensive chemical processes with low-temperature, low-pressure light-driven chemical reactions. Plasmonic nanostructures have emerged as promising photocatalysts with exceptional and tunable ...

EPFL2024

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Synthesis and properties of heterostructures in nanowires and 2-D materials

Akshay Balgarkashi

Modern solid-state devices were made possible by the discovery of semiconductor heterostructures. Heterostructures offer the ability to fabricate low-dimensional nanostructures such as quantum dots which can restrain carriers in all three-directions. Quant ...

EPFL2022

Controlled filamentation instability as a scalable fabrication approach to flexible metamaterials

Fabien Sorin, Louis Marie Philippe Martin-Monier, Pierre-Luc Eloi Piveteau, William Nicolas Duncan Esposito

Long and flexible arrays of nanowires find impactful applications in sensing, photonics, and energy harvesting. Conventional manufacturing relies largely on lithographic methods limited in wafer size, rigidity, and machine write time. Here, we report a sca ...

Nature Portfolio2022

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

Wetting of nanopores probed with pressure

Aleksandra Radenovic, Michal Daniel Macha, Sanjin Marion, Andrey Chernev, Sebastian James Davis

Nanopores are both a tool to study single-molecule biophysics and nanoscale ion transport, but also a promising material for desalination or osmotic power generation. Understanding the physics underlying ion transport through nano-sized pores allows better ...

ROYAL SOC CHEMISTRY2021

Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films

Mahdi Zamani

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...

EPFL2021

Increasing Functionality of III-V Nanowires on Silicon Substrates

Wonjong Kim

Progress in nanotechnology, including fabrication and characterization tools, opened up the unprecedented low dimensional materials era, where we can manipulate and structure matter on a size scale that we could not reach before. Due to many interesting pr ...

EPFL2020

Silicon Nanowire Arrays Coated with Ag and Au Dendrites for Surface-Enhanced Raman Scattering

Siarhei Zavatski

Silicon nanowires (SiNWs) were comprehensively characterized in dependence on conditions of their formation via metal (Ag) -assisted chemical etching (MACE) of monocrystalline Si. The Ag structures remained on/between SiNWs based on both n- and p-Si were f ...

2020

In-situ reflectometry to monitor locally-catalyzed initiation and growth of nanowire assemblies

Anna Fontcuberta i Morral

We investigate in-situ laser reflectometry for measuring the axial growth rate in chemical vapor deposition of assemblies of well-aligned vertical germanium nanowires grown epitaxially on single crystal substrates. Finite difference frequency domain optica ...

IOP PUBLISHING LTD2020

TiO2- based ceramics, from basic science to applications

Lidia Rocoffort de Vinnière

Nanomaterials and nanoparticles are nowadays used in a wide range of applications; from sunscreens, paint and food industry to catalytic processes, lighting, TV's and displays, their presence is percolating in our daily life. New applications rise every da ...

EPFL2020

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Esther Alarcon Llado

Physical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si ...

Elsevier2014

Geometrical optimisation of core-shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

Andrea Ingenito

Background: Elongated nanostructures, such as nanowires, have attracted significant attention for application in silicon-based solar cells. The high aspect ratio and characteristic radial junction configuration can lead to higher device performance, by inc ...

Beilstein Institut2019

Passivation of ZnO Nanowire Guests and 3D Inverse Opal Host Photoanodes for Dye-Sensitized Solar Cells

Michael Graetzel, Mohammad Khaja Nazeeruddin, Thomas Moehl, Aravind Kumar Chandiran, Nicolas Tétreault, Hauke Arne Harms, Philippe Pierre Labouchère

A hierarchical host-guest nanostructured photoanode is reported for dye-sensitized solar cells. It is composed of ZnO nanowires grown in situ into the macropores of a 3D ZnO inverse opal structure, which acts both as a seed layer and as a conductive backbo ...

Wiley-VCH Verlag Berlin2014

High-temperature annealing effects on molybdenum-silicon contact substrate for vertically structured silicon quantum-dot solar cells

Chien-Jen Yang

This paper studies the applicability of sputtered Molybdenum (Mo) thin films on silicon wafers (Mo-Si) to act as contact substrates for vertically structured Si quantum-dot (QD) solar cells. The compatibility of Mo-Si contact substrate with Si QD material ...

2019

III-V nanowire arrays: growth and light interaction

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin Heiss, Federico Matteini, Eleonora Russo, Sonia Conesa Boj, Esther Alarcon Llado, Anna Dalmau Mallorquí

Semiconductor nanowire arrays are reproducible and rational platforms for the realization of high performing designs of light emitting diodes and photovoltaic devices. In this paper we present an overview of the growth challenges of III-V nanowire arrays o ...

Institute of Physics2014

Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

Nicolas Bologna

III-V semiconductor nanowires are, due to their unique properties, one of the most promising nanostructures developed in the last decades. However, the realization of commercial devices made of III-V nanowires, such as transistors and solar cells, has not ...

EPFL2019

Self-assembled quantum dots in a nanowire system for quantum photonics

Nicola Marzari, Anna Fontcuberta i Morral, Marco Cantoni, Martin Heiss, Eleonora Russo, Sonia Conesa Boj, Yannik Fontana, Bernt Ketterer

Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-a ...

Nature Publishing Group2013

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Gözde Tütüncüoglu

This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...

EPFL2017