Publications related to Alignment of defect energy levels at the Si-SIO2 interface from hybrid density functional calculations

Related publications (6)

Ultraviolet to mid-infrared optical properties of sputtered Al(Sc)N-on-SiO2 thin films and experimental demonstration of AlN integrated photonic devices in the telecom C-band

Luis Guillermo Villanueva Torrijo, Hernán Furci

Thin film aluminum nitride (AlN) stands out as a promising material for integrated photonics due to its wide bandgap of 6.1 eV, facilitating efficient operation across diverse spectral ranges. Its inherent electro-optic and nonlinear optical properties mak ...

2024

Development and characterization of N2O-plasma oxide layers for high-temperature p-type passivating contacts in silicon solar cells

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Sofia Libraro, Audrey Marie Isabelle Morisset, Julien Hurni, Ezgi Genç, David Fernando Reyes Vasquez

Full-area passivating contacts based on SiOx/poly-Si stacks are key for the new generation of industrial silicon solar cells substituting the passivated emitter and rear cell (PERC) technology. Demonstrating a potential efficiency increase of 1 to 2% compa ...

American Chemical Society (ACS)2024

Smart Slit Assembly Employing Continuously Tunable MEMS Shutter

Niels Quack, Hamed Sattari, Gergely Huszka, Anton Lagosh

We present the concept and detailed design of a Smart Slit Assembly for next generation spectrometers, and we experimentally demonstrate operation of an individual 221 mu m x 111 mu m smart slit channel employing a MEMS actuated shutter to continuously mod ...

SPIE-INT SOC OPTICAL ENGINEERING2021

A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches

Mihai Adrian Ionescu, Andreas Schueler, Anna Krammer, Emanuele Andrea Casu, Andrei Müller, Junrui Zhang, Riyaz Mohammed Abdul Khadar

The article presents the design, fabrication and characterization of a novel complementary metal-oxidesemiconductor (CMOS) compatible reconfigurable Ka band bandstop structure using split ring resonators (SRR) while employing the Vanadium Dioxide (VO2) pha ...

IEEE2019

High-Quality Microcrystalline Silicon for Efficient Thin-Film Solar Cells : Insights into Plasma and Material Properties

Grégory Bugnon

This thesis investigates the link between the plasma deposition conditions and microcrystalline silicon (μc-Si:H) material quality for thin-film silicon photovoltaic applications. The role of interfaces and the μc-Si:H material quality on the device perfor ...

EPFL2013

Window layer with p doped silicon oxide for high V-oc thin-film silicon n-i-p solar cells

Christophe Ballif, Franz-Josef Haug, Jordi Escarre Palou, Céline Pahud, Rémi Biron

We investigate the influence of the oxygen content in boron-doped nanocrystalline silicon oxide films (p-nc-SiOx) and introduce this material as window layer in n-i-p solar cells. The dependence of both, optical and electrical properties on the oxygen cont ...

American Institute of Physics2011