Charge-based modeling of field effect transistors, Make it easy

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Quantum computing is expected to complement classical von-Neumann architectures in solving problems beyond the reach of conventional digital machines. This new model of computation leverages the rich complexity of many-body quantum systems to perform compu ...

Designing SPADs with high sensitivity in a wide wavelength range is crucial since the applications utilizing SPAD-based sensors target different parts of the spectrum. Here, we introduce a novel technique to achieve a wider sensitivity spectrum through the ...

We present a new setup for resonant inelastic hard x-ray scattering at the Bernina beamline of SwissFEL with energy, momentum, and temporal resolution. The compact R = 0.5 m Johann-type spectrometer can be equipped with up to three crystal analyzers and al ...

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

This data set contains the data collected during the FNS project Green Piezo (Grant no. 179064) in association with the publication entitled “Organic Electrochemical Transistors Printed from Degradable Materials as Disposable Biochemical Sensors”. This wor ...

ATP-Binding Cassette (ABC) transporters are a broad family of biological machines, found in most prokaryotic and eukaryotic cells, performing the crucial import or export of substrates through both plasma and organellar membranes, and maintaining a steady ...

Motivated by the resistive switchings in transition-metal oxides (TMOs) induced by a voltage bias, we study the far-from-equilibrium dynamics of an electric-field-driven strongly correlated model featuring a first-order insulator-to-metal transition at equ ...

We show how to construct, by exploiting adiabatic time and length scale separation between atomistic and continuum mechanics, a multiscale scheme for continuum dynamics free from macroscopic constitutive modeling. To do so, we introduce a new set of degree ...

Low-density neutron matter is characterized by fascinating emergent quantum phenomena, such as the formation of Cooper pairs and the onset of superfluidity. We model this density regime by capitalizing on the expressivity of the hidden-nucleon neural-netwo ...

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

Charge-based modeling of field effect transistors, Make it easy

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Electron Spin Qubit Architectures on Fully Depleted Silicon-On-Insulator Substrates for Scalable Quantum Computing

A new double multiplication region method to design high sensitivity and wide spectrum SPADs in standard CMOS technologies

A setup for hard x-ray time-resolved resonant inelastic x-ray scattering at SwissFEL

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

The magnetoelectric effect in LiFePO4 - Revisited (vol 648, 414380, 2022)

Dataset for 'Organic Electrochemical Transistors Printed from Degradable Materials as Disposable Biochemical Sensors'

ABC transporters are billion-year-old Maxwell Demons

Electrically driven insulator-to-metal transition in a correlated insulator: Electronic mechanism and thermal description

Continuum mechanics from molecular dynamics via adiabatic time and length scale separation

Dilute neutron star matter from neural-network quantum states

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

A perspective on multi-channel technology for the next-generation of GaN power devices