Publication

Artificial Band Discontinuities at GaAs Homojunctions

Giorgio Margaritondo, Romuald Houdré, Alok Rudra, Marc Ilegems
1993
Journal Articles

Abstract

Valence- and conduction-band offsets can be induced at GaAs(100) polar homojunctions by means of ultrathin Si intralayers. The microscopic interface dipole responsible for the creation of such offsets can be varied by changing the Si intralayer thickness; the consequently variable band discontinuities represent a tunable parameter with potential applications in band-gap engineering. Even though the existence and the direction of these discontinuities are in agreement with theoretical predictions, the existing models overestimate the amount of the offset and cannot explain its dependence on the intralayer thickness. The presence of Si outdiffusion can be a possible explanation for this partial disagreement.

Official source

https://infoscience.epfl.ch/entities/publication/32f79f5b-2a0b-42ba-acce-edae8fa615fa

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Giorgio Margaritondo, Romuald Houdré, Alok Rudra, Marc Ilegems
1993
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/32f79f5b-2a0b-42ba-acce-edae8fa615fa

About this result

Related concepts (22)

Heterojunction

A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably.

Graphene

Graphene (ˈgræfiːn) is an allotrope of carbon consisting of a single layer of atoms arranged in a hexagonal lattice nanostructure. The name is derived from "graphite" and the suffix -ene, reflecting the fact that the graphite allotrope of carbon contains numerous double bonds. Each atom in a graphene sheet is connected to its three nearest neighbors by σ-bonds and a delocalised π-bond, which contributes to a valence band that extends over the whole sheet.

Band gap

In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band.

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Artificial Band Discontinuities at GaAs Homojunctions

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