Publication

Microscopic-Scale Lateral Inhomogeneities of the Schottky-Barrier-Formation Process

Giorgio Margaritondo, Helmuth Berger
1993
Journal Articles

Abstract

The interpretation of photoemission-spectromicroscopy studies of Au on GaSe requires a revision of established ideas about this interface, which has long been considered a prototype of Schottky-like systems. We find that the interface-formation process involves strong substrate-overlayer interactions, the release of free Ga, and the formation of interface species, and leads to a barrier height in total disagreement with the Schottky model. Furthermore, the space-resolving capabilities of our instruments revealed lateral inhomogeneities of the local overlayer thickness and of the local band bending.

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https://infoscience.epfl.ch/entities/publication/2d24c9f1-15b7-4ae8-acc6-8f3bad6b1474

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Giorgio Margaritondo, Helmuth Berger
1993
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/2d24c9f1-15b7-4ae8-acc6-8f3bad6b1474

About this result

Related concepts (17)

Metal–semiconductor junction

In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.

Band bending

In solid-state physics, band bending refers to the process in which the electronic band structure in a material curves up or down near a junction or interface. It does not involve any physical (spatial) bending. When the electrochemical potential of the free charge carriers around an interface of a semiconductor is dissimilar, charge carriers are transferred between the two materials until an equilibrium state is reached whereby the potential difference vanishes.

Ohmic contact

An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I–V) curve as with Ohm's law. Low-resistance ohmic contacts are used to allow charge to flow easily in both directions between the two conductors, without blocking due to rectification or excess power dissipation due to voltage thresholds. By contrast, a junction or contact that does not demonstrate a linear I–V curve is called non-ohmic.

Related publications (4)

Microscopic-Scale Lateral Inhomogeneities of the Schottky-Barrier-Formation Process

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