Publication

2.7 Kv E-mode Multichannel Gan-on-si Based on P-type Nio/sio<sub>2</sub> Junction Tri-gate

2025

Abstract

In this work, an E-mode multichannel HEMT is demonstrated based on p-type NiO/SiO2 as a gate stack to form a junction tri-gate structure. NiO provides a high hole concentration ( approximate to 10(19) cm (-3) ), resulting in an effective depletion of electrons in the multiple 2DEG channels under the gate. A thin SiO2 layer acts as a sacrificial layer, preventing damage to the fins during NiO deposition. As a result, E-mode operation can be achieved with 3x-larger tri-gate fins, compared to SiO2 alone, with V(th )of 0.7 V (at 1 mu A/mm), negligible threshold voltage hysteresis ( Delta V-th of 0.05 V), together with small on-resistance ( R-ON ) of 2.8 m Omega & sdot; cm(2) for a gate-to-drain separation ( L-GD ) of 20 mu m. In addition, the devices showed exceptional off-state characteristics, including breakdown voltage ( V-br ) of 2.7 kV, and ON/OFF current ratio of 10(9) , showcasing the potential of the p-NiO/SiO2 gate stack for high-performance E-mode power devices.

Official source

https://infoscience.epfl.ch/entities/publication/2b1545f7-ee67-4b59-a0d7-a895b9e8b517

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2025

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/2b1545f7-ee67-4b59-a0d7-a895b9e8b517

About this result

Related concepts (32)

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

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