Publication

HIGH-SPEED INP/GAINAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS GROWN BY CHEMICAL BEAM EPITAXY

Jean-François Carlin
1994
Journal Articles

Abstract

We report the fabrication and characterization of lateral metal-semiconductor-metal (MSM) photodiodes on an InP substrate. The photoabsorbing layer is made of InGaAs covered by a thin InP Schottky barrier enhancement layer. Schottky contacts for the detectors were formed by the evaporation of Au and patterned using a lift-off technique. The MSM photodiodes exhibit a dark current lower than 200 nA at 15-V bias, an efficient photoresponse up to 1.6 mum, and a fast deconvoluted full width at half maximum response of about 25 ps at 12-V bias.

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https://infoscience.epfl.ch/entities/publication/27a30fae-7f64-4d24-a225-e6028874d81e

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Jean-François Carlin
1994
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/27a30fae-7f64-4d24-a225-e6028874d81e

About this result

Related concepts (25)

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.

Photodetector

Photodetectors, also called photosensors, are sensors of light or other electromagnetic radiation. There is a wide variety of photodetectors which may be classified by mechanism of detection, such as photoelectric or photochemical effects, or by various performance metrics, such as spectral response. Semiconductor-based photodetectors typically photo detector have a p–n junction that converts light photons into current. The absorbed photons make electron–hole pairs in the depletion region.

Epitaxy

Epitaxy (prefix epi- means "on top of”) refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material.

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HIGH-SPEED INP/GAINAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS GROWN BY CHEMICAL BEAM EPITAXY

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