Light phase modulator

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InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

The emergence of wide-band-gap (WBG) power transistors with low conduction losses and high-speed switching speeds has paved the way for more-than-ever efficient power electronics systems and huge energy saving potentials. Likewise, power density- the ratio ...

GaN-on-Si high-electron-mobility transistors (HEMTs) exhibit excellent properties for efficient power conversion. Nevertheless, a considerable energy loss associated with the charging and discharging of the output capacitance (COSS) in these transistors se ...

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

Emerging reconfigurable nanotechnologies allow the implementation of self-dual functions with a fewer number of transistors as compared to traditional CMOS technologies. To achieve better area results for Reconfigurable Field-Effect Transistors (RFET)-base ...

An integrated circuit fabricated using industry-standard 40 nm complementary metal-oxide-semiconductor technology can combine silicon quantum devices, digital addressing and analogue multiplexed dispersive readout electronics. ...

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

Recent research has reported an undesirable OFF-state loss in high-frequency soft-switching power converters, such as resonant converters. This loss is attributed to a hysteresis loss related to the charging-discharging process of the output capacitance of ...

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

We present the concept and detailed design of a Smart Slit Assembly for next generation spectrometers, and we experimentally demonstrate operation of an individual 221 mu m x 111 mu m smart slit channel employing a MEMS actuated shutter to continuously mod ...

Light phase modulator

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A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Preserving Self-Duality During Logic Synthesis for Emerging Reconfigurable Nanotechnologies

A cryo-CMOS chip that integrates silicon quantum dots and multiplexed dispersive readout electronics

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Multi-channel nanowire devices for efficient power conversion

Smart Slit Assembly Employing Continuously Tunable MEMS Shutter