Light phase modulator

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In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Recent decades have seen significant advancements in integrated photonics, driven by improvements in nanofabrication technology. This field has been developed from integrated semiconductor lasers and low-loss waveguides to optical modulators, enabling the ...

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

The interaction of light and matter enables nonlinear frequency conversion and the creation of coherent currents. The optical control of electric currents is of fundamental relevance and prominent research focus in the last decades. These photocurrents ena ...

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

Quantum random number generators (QRNGs) are a burgeoning technology used for a variety of applications, including modern security and encryption systems. Typical methods exploit an entropy source combined with an extraction or bit generation circuit in or ...

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

Today, we are witnessing the Internet of Things (IoT) revolution, which facilitates and improves our lives in many aspects, but comes with several challenges related to the technology deployment at large scales. Handling ever growing amounts of information ...

Individual transistors based on emerging reconfigurable nanotechnologies exhibit electrical conduction for both types of charge carriers. These transistors (referred to as Reconfigurable Field-Effect Transistors (RFETs)) enable dynamic reconfiguration to d ...

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

Due to their synaptic functionality based on interacting electronic and ionic charge carriers, organic electrochemical transistors (OECTs) appeal as highly attractive candidates for a new generation of organic neuromorphic devices. Despite their acknowledg ...

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Two-dimensional (2D) transition metal dichalcogenides (TMDs) possess remarkable optoelectronic properties which are unique and tunable based on composition and thickness. These materials are posed to revolutionize ultrathin devices across many fields inclu ...

In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, called dissipation dilution, is employed in mirror suspensions of gravitational-wave interferometers and at t ...

A cryogenic broadband low noise amplifier (LNA) for quantum applications based on a standard 40-nm CMOS technology is reported. The LNA specifications are derived from the readout of semiconductor quantum bits at 4.2 K, whose quantum information signals ar ...

Light phase modulator

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Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Piezoelectric actuation for integrated photonics

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Photoinduced Second-Order Nonlinearities in Centrosymmetric Media

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

A 3.3-Gb/s SPAD-Based Quantum Random Number Generator

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Energy Efficient Sensing using Steep Slope Devices

Utilizing XMG-based Synthesis to Preserve Self-Duality for RFET-Based Circuits

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

On the Modeling of Organic Electrochemical Transistors

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Semiconducting two dimensional transition metal dichalcogenides via solution-processable routes

Strained crystalline nanomechanical resonators with quality factors above 10 billion

A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications