Publication

Pseudomorphic growth induced by chemical adatom potential

Klaus Kern, Harald Brune
1997
Journal Articles

Abstract

The transformation from pseudomorphic to dislocated and back to pseudomorphic growth with increasing coverage is reported for molecular beam epitaxy of Ag on Pt(111). Below a critical size of 200 Angstrom two-dimensional Ag islands grow coherently strained, while larger islands relieve strain through the introduction of misfit dislocations. Upon completion of the first monolayer, the dislocations disappear and the Ag film again adopts a pseudomorphic structure. With the help of effective-medium theory calculations, it is shown that this effect is related to the elevated chemical potential of Ag adatoms on top of the first Ag monolayer. (C) 1997 Elsevier Science B.V.

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https://infoscience.epfl.ch/entities/publication/212057f5-4bc9-497b-a1dc-484e4c25f16c

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Klaus Kern, Harald Brune
1997
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/212057f5-4bc9-497b-a1dc-484e4c25f16c

About this result

Related concepts (19)

Dislocation

In materials science, a dislocation or Taylor's dislocation is a linear crystallographic defect or irregularity within a crystal structure that contains an abrupt change in the arrangement of atoms. The movement of dislocations allow atoms to slide over each other at low stress levels and is known as glide or slip. The crystalline order is restored on either side of a glide dislocation but the atoms on one side have moved by one position. The crystalline order is not fully restored with a partial dislocation.

Molecular-beam epitaxy

Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). Original ideas of MBE process were first established by K.

Indium phosphide

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine.

Related publications (18)

Pseudomorphic growth induced by chemical adatom potential

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