Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud

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Ultraviolet-induced degradation (UV-ID) of various PV cell types was analyzed under optical UV filters with different cutoff wavelengths. Cell types studied included interdigitated back contact (IBC), passivated emitter and rear totally diffused (PERT), an ...

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

Environmental challenges impose a rapid energy transition. The renewable power capacity is expected to increase by 50% in the next 5 years, and recent scenarios plan that photovoltaics (PV) will be leading the new energy sources. Combining high efficiencie ...

In nanocrystalline diamond thin films, the high grain boundary density and the associated grain boundary properties may dominate the overall material behavior. In the present work, we systematically investigate (111) twist grain boundaries in diamond carbo ...

Employing polymer cantilevers has shown to outperform using their silicon or silicon nitride analogues concerning the imaging speed of atomic force microscopy (AFM) in tapping mode (intermittent contact mode with amplitude modulation) by up to one order of ...

It was recently shown that silicon particles in heat-treated Al–Si casting alloys can contain flaws such as surface pinholes and grooves, which cause varying degrees of reduction in the in situ particle fracture strength and hence influence the mechanical ...

The aim of this work has been the investigation of homo-junction Tunnel Field Effect Transistors starting from a compact modelling perspective to its possible applications. Firstly a TCAD based simulation study is done to explain the main device characteri ...

True Single-Phase Clock (TSPC) Flip-Flops, based on dynamic logic implementation, are area-saving and high-speed compared to standard static flip-flops. Furthermore, logic gates can be embedded into TSPC flip-flops which significantly improves performance. ...

This thesis investigates the link between the plasma deposition conditions and microcrystalline silicon (μc-Si:H) material quality for thin-film silicon photovoltaic applications. The role of interfaces and the μc-Si:H material quality on the device perfor ...

The Hall cells intended for industrial applications are mainly produced in silicon integrated circuit technology. Recently, the increased use of other technologies, such as GaAs, InAs and InSb, have been reported. However, a single chip solution comprising ...

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud

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Enhancing lifetime, forecasting, and economic benefits of photovoltaic technologies undergoing UV-induced degradation with optical filtering

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Molybdenum oxide as a case study for the diagnosis of carrier selective contacts in silicon heterojunction solar cells

On the structure of (111) twist grain boundaries in diamond: atomistic simulations with Tersoff-type interatomic potentials

Integration of sharp silicon nitride tips into high-speed SU8 cantilevers in a batch fabrication process

Silicon particle pinhole defects in aluminium–silicon alloys

Tunnel Field Effect Transistors : from Steep-Slope Electronic Switches to Energy Efficient Logic Applications

TSPC Flip-Flop Circuit Design with Three-Independent-Gate Silicon Nanowire FETs

High-Quality Microcrystalline Silicon for Efficient Thin-Film Solar Cells : Insights into Plasma and Material Properties

Layout and Architecture Issues in Hall based CMOS microsystems

Retention in nonvolatile silicon transistors with an organic ferroelectric gate