Publications related to Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Related publications (41)

Ultrafast Tunable Photonic Integrated Extended-DBR Pockels Laser

Tobias Kippenberg, Anat Siddharth, Zheru Qiu, Andrey Voloshin, Simone Bianconi

Hybrid photonic integrated lasers have revolutionized laser technology by combining the scalable manufacturing of simple laser diodes with high-performance features such as frequency stability, opticallinewidth, and tuning linearity [1], traditionally only ...

IEEE2025

Spatial quantum-interference landscapes of multi-site-controlled quantum dots coupled to extended photonic cavity modes

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Alessio Massimiliano Davide Miranda

A compact platform to integrate emitters in a cavity-like support is to embed quantum dots (QDs) in a photonic crystal (PhC) structure, making them promising candidates for integrated quantum photonic circuits. The emission properties of QDs can be modifie ...

2025

Low-noise, frequency-agile photonic integrated lasers

Anat Siddharth

Photonic integrated circuits (PICs) have revolutionized optical communication and precision metrology by enabling compact, scalable, and high-performance optical systems. However, conventional integrated laser sources suffer from limitations such as poor c ...

EPFL2025

High-quality epitaxial BaTiO3 films grown by high-vacuum chemical vapor deposition for integrated electro-optical devices

Patrik Willi Hoffmann, Wojciech Bozydar Szmyt

Synthesizing high-quality epitaxial BaTiO3 (BTO) by means of high-vacuum chemical vapor deposition (HV-CVD) requires a precise control over precursor fluxes impinging onto the heated substrate surface so that the incorporation rates of all elements corresp ...

2025

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Pierre Christophe Lottigier

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

EPFL2024

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Integrated chirped photonic-crystal cavities in gallium phosphide for broadband soliton generation

Tobias Kippenberg, Johann Emmeram Riemensberger, Miles Henry Anderson, Nikolai Kuznetsov, Alisa Davydova

Chirped mirrors have underpinned advances in ultra-fast lasers based on bulk optics but have yet to be fully exploited in integrated photonics, where they could provide a means to engineer otherwise unattainable dispersion profiles for a range of nonlinear ...

2024

Heterostructure design and field management in III-N high-electron mobility electronic devices

Catherine Erine

III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

EPFL2021

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Yao Chen

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024

Piezoelectrically tunable, narrow linewidth photonic integrated extended-DBR lasers

Tobias Kippenberg, Johann Emmeram Riemensberger, Anat Siddharth, Zheru Qiu, Andrey Voloshin, Junyin Zhang, Andrea Bancora, Simone Bianconi

Recent advancements in ultra-low-loss silicon nitride (Si3N4)-based photonic integrated circuits have surpassed fiber lasers in coherence and frequency agility. However, high manufacturing costs of DFB and precise control requirements, as required for self ...

Optica Publishing Group2024

III-nitride photonic cavities

Nicolas Grandjean, Raphaël Butté

Owing to their wide direct bandgap tenability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state lighting revolution and blue laser diodes that a ...

WALTER DE GRUYTER GMBH2020

Photothermal spectroscopy on-chip sensor for the measurement of a PMMA film using a silicon nitride micro-ring resonator and an external cavity quantum cascade laser

Simone Iadanza

Laser-based mid-infrared (mid-IR) photothermal spectroscopy (PTS) represents a selective, fast, and sensitive analytical technique. Recent developments in laser design permits the coverage of wider spectral regions in combination with higher power, enablin ...

Walter De Gruyter Gmbh2024

Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations

Alfredo Pasquarello, Sai Lyu

The band alignment and the chemical bonding at the beta -Ga2O3/AlN and beta -Ga2O3/GaN interfaces are studied through hybrid functional calculations. We construct realistic slab models with III-O (III = Al, Ga) bonds dominating the chemical bonding at both ...

2020

Towards video-rate compressive spontaneous Raman imaging using single-photon avalanche diode arrays

Edoardo Charbon, Claudio Bruschini, Samuel Burri

Compressive Raman imaging has emerged as a promising technique to speed up chemical imaging by compressing the data during acquisition. Yet, current scanning imaging speed is fundamentally limited by the sensors pixel dwell times of at best 1µs. Here, we i ...

SPIE2024

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Giulia Tagliabue

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

AMER CHEMICAL SOC2020

Ultraviolet to mid-infrared optical properties of sputtered Al(Sc)N-on-SiO2 thin films and experimental demonstration of AlN integrated photonic devices in the telecom C-band

Luis Guillermo Villanueva Torrijo, Hernán Furci

Thin film aluminum nitride (AlN) stands out as a promising material for integrated photonics due to its wide bandgap of 6.1 eV, facilitating efficient operation across diverse spectral ranges. Its inherent electro-optic and nonlinear optical properties mak ...

2024

Nanosecond pulsed laser-processing of CVD diamond

Patrik Willi Hoffmann, Marco Cantoni, Sébastien Equis

This work considers the resulting material structural effects of laser-processing chemical vapor deposited (CVD) diamond. The utilized 532 nm wavelength laser had a pulse duration of 40 ns together with a spot diameter of ca. 40 mu m. The effect of cutting ...

ELSEVIER SCI LTD2020

A review of recent developments on CMOS single-photon avalanche diode-based cameras for biomedical time-resolved applications

Edoardo Charbon, Claudio Bruschini

All-solid-state time-resolved cameras based on CMOS single-photon avalanche diode (SPAD) arrays have made very significant advances since the fabrication of the first CMOS SPADs back in 2003. These natively digital sensors are now available in large format ...

SPIE2024

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

Pirouz Sohi

Over the past 20 years, III-nitrides (GaN, AlN, InN and their alloys) have proven to be an excellent material group for electronic devices, in particular, for high electron mobility transistors (HEMTs) operating at high frequency and high power. This is ma ...

EPFL2019