Publication

Lateral and cross-well transport of highly and moderately excited carriers in Si1-xGex/Si superlattices

Jean-Louis Staehli
1998
Journal Articles

Abstract

Picosecond transient reflectometry and dynamic grating techniques have been applied to investigate the perpendicular and parallel transport of optically excited carriers in strained-layer Si0.83Ge0.17/Si superlattices. We present results of the carrier ambipolar diffusivity and effective lifetime measurements in the layered structure and substrate within the 10(17)-10(20) cm(-3) density range. The combined experimental data are discussed in terms of parallel and perpendicular diffusion of carriers, interface recombination, and lattice heating. The estimated lateral and cross-well diffusion constants are 10 and 0.16 cm(2)/s at room temperature, respectively. (C) 1998 American Institute of Physics.

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https://infoscience.epfl.ch/entities/publication/19626c40-f8a9-4559-93c6-4ac1eb831283

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Jean-Louis Staehli
1998
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/19626c40-f8a9-4559-93c6-4ac1eb831283

About this result

Related concepts (32)

Charge carrier

In physics, a charge carrier is a particle or quasiparticle that is free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors. Examples are electrons, ions and holes. The term is used most commonly in solid state physics. In a conducting medium, an electric field can exert force on these free particles, causing a net motion of the particles through the medium; this is what constitutes an electric current.

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In the solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes.

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Parallel computing is a type of computation in which many calculations or processes are carried out simultaneously. Large problems can often be divided into smaller ones, which can then be solved at the same time. There are several different forms of parallel computing: bit-level, instruction-level, data, and task parallelism. Parallelism has long been employed in high-performance computing, but has gained broader interest due to the physical constraints preventing frequency scaling.

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Lateral and cross-well transport of highly and moderately excited carriers in Si1-xGex/Si superlattices

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