Publication

Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers

1986
Journal Articles

Abstract

We have studied the electrical characteristics of p‐GaAs/n‐Si (100) heterojunction diodes grown by molecular beam epitaxy in an effort to determine the interface polarity. A Ga or As pre‐exposure was used prior to the growth of p‐GaAs on n‐Si substrates to prevent antiphase domains. The Ga prelayer induces a shift in the built‐in voltage of −0.2 V, while the As prelayer shifts it as much as +2.0 V depending upon the As coverage. From the shift, the electrical charge and its polarity can be determined which is not possible by structural analysis. These electrical measurements are very sensitive to the interface charge properties and show very clearly that even with a submonolayer pre‐exposure, antiphase domain‐free material can be obtained.

Official source

https://infoscience.epfl.ch/entities/publication/160bea33-79de-484a-b884-022d1dd47e29

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1986
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/160bea33-79de-484a-b884-022d1dd47e29

About this result

Related concepts (32)

Molecular-beam epitaxy

Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). Original ideas of MBE process were first established by K.

Heterojunction

A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably.

Surface charge

A surface charge is an electric charge present on a two-dimensional surface. These electric charges are constrained on this 2-D surface, and surface charge density, measured in coulombs per square meter (C•m−2), is used to describe the charge distribution on the surface. The electric potential is continuous across a surface charge and the electric field is discontinuous, but not infinite; this is unless the surface charge consists of a dipole layer. In comparison, the potential and electric field both diverge at any point charge or linear charge.

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Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers

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