Solid-State Technology for Shipboard DC Power Distribution Networks

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Accurate and low-noise generation and amplification of microwave signals are required for the manipulation and readout of quantum bits (qubits). A fault-tolerant quantum computer operates at deep cryogenic temperatures (i.e.,

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

From recent advances in solid state physics, a novel material classification scheme has evolved which is based on the concept of topology and provides an understanding of different phenomena ranging from quantum transport to unusual flavors of superconduct ...

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...

This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, ...

The absorption spectra of 2D semiconductors are dominated by excitons with binding energy of several hundreds of meV. Nevertheless, even single layers show an appreciable photovoltaic effect and work as the active material in high sensitivity photodetector ...

This paper presents an extension to the Combinatorial Equilibrium Modelling (CEM) design framework. So far, CEM gives the possibility to generate and explore multiple spatial equilibrium solutions in the early conceptual design phase. In addition to the fo ...

Solid-State Technology for Shipboard DC Power Distribution Networks

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Benefits and Challenges of Designing Cryogenic CMOS RF Circuits for Quantum Computers

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Charge transport properties of spin-orbit coupled materials in different correlation regimes

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Characterization and Modeling of 28 nm Bulk CMOS Technology down to Cryogenic Temperatures (4.2 K)

Field-induced charge separation dynamics in monolayer MoS2

Constraint-Driven Design with Combinatorial Equilibrium Modelling