Publication

Enabling proximity mask-aligner lithography with a 193nm CW light source

Toralf Scharf, Wilfried Noell, Raoul Kirner
2018
Conference Papers

Abstract

We introduce a novel industrial grade 193nm continuous-wave laser light source for proximity mask-aligner lithography. A diode seed laser in master-oscillator power-ampliﬁcation conﬁguraton is frequency-quadrupled using lithiumtriborate and potassium-ﬂuoro-beryllo-borate non-linear crystals. The large coherence-length of this monomodal laser is controlled by static and rotating shaped random diﬀusers. Beam shaping with imaging and non-imaging homogenizers realized with diﬀractive and refractive micro-optical elements is compared in simulation and measurement. We demonstrate resolution patterns oﬀering resolutions

Official source

https://infoscience.epfl.ch/entities/publication/116375a6-4421-4971-a694-2d8110b244b2

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Toralf Scharf, Wilfried Noell, Raoul Kirner
2018
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/116375a6-4421-4971-a694-2d8110b244b2

About this result

Related concepts (18)

Laser

A laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word laser is an anacronym that originated as an acronym for light amplification by stimulated emission of radiation. The first laser was built in 1960 by Theodore Maiman at Hughes Research Laboratories, based on theoretical work by Charles H. Townes and Arthur Leonard Schawlow. A laser differs from other sources of light in that it emits light that is coherent.

Extreme ultraviolet lithography

Extreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in semiconductor device fabrication to make integrated circuits (ICs). It uses extreme ultraviolet (EUV) wavelengths near 13.5 nm, using a laser-pulsed tin (Sn) droplet plasma (Sn ions in the ionic states from Sn IX to Sn XIV give photon emission spectral peaks around 13.5 nm from 4p64dn - 4p54dn+1 + 4dn-14f ionic state transitions.), to produce a pattern by using a reflective photomask to expose a substrate covered by photoresist.

Electron-beam lithography

Electron-beam lithography (often abbreviated as e-beam lithography, EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.

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Enabling proximity mask-aligner lithography with a 193nm CW light source

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