Publication

Design-dependent gauge factors of highly doped n-type 4H-SiC piezoresistors

Nico de Rooij
2012
Journal Articles

Abstract

This paper presents the experimentally obtained gauge factor (GF) of 4H-SiC piezoresistors, fabricated out of the n-type epitaxial layer and characterized on millimeter-size SiC cantilever beams at room temperature. It was found that the GF is dependent on the piezoresistor's length and width. Piezoresistors narrower than approximately 30 mu m showed a width-dependent GF. The highest GF of 20.8 was obtained with a single element piezoresistor in transverse orientation. In longitudinal orientation, the highest GF was -10, which was obtained with a clustered piezoresistor with plural identical elements. Essential factors to consider for the design of optimum 4H-SiC piezoresistors for a Wheatstone bridge configuration are presented.

Official source

https://infoscience.epfl.ch/entities/publication/10ee3d7f-4a2f-4b71-ba00-cc0322eb6c2f

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Nico de Rooij
2012
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/10ee3d7f-4a2f-4b71-ba00-cc0322eb6c2f

About this result

Related concepts (23)

Gauge theory

In physics, a gauge theory is a field theory in which the Lagrangian is invariant under local transformations according to certain smooth families of operations (Lie groups). The term gauge refers to any specific mathematical formalism to regulate redundant degrees of freedom in the Lagrangian of a physical system. The transformations between possible gauges, called gauge transformations, form a Lie group—referred to as the symmetry group or the gauge group of the theory. Associated with any Lie group is the Lie algebra of group generators.

Strain gauge

A strain gauge (also spelled strain gage) is a device used to measure strain on an object. Invented by Edward E. Simmons and Arthur C. Ruge in 1938, the most common type of strain gauge consists of an insulating flexible backing which supports a metallic foil pattern. The gauge is attached to the object by a suitable adhesive, such as cyanoacrylate. As the object is deformed, the foil is deformed, causing its electrical resistance to change.

Grand Unified Theory

In particle physics, a Grand Unified Theory (GUT) is a model in which, at high energies, the three gauge interactions of the Standard Model comprising the electromagnetic, weak, and strong forces are merged into a single force. Although this unified force has not been directly observed, many GUT models theorize its existence. If the unification of these three interactions is possible, it raises the possibility that there was a grand unification epoch in the very early universe in which these three fundamental interactions were not yet distinct.

Related publications (2)

Design-dependent gauge factors of highly doped n-type 4H-SiC piezoresistors

Chat with Graph Search

Subzero fast self-healing and adhesive violet phosphorene incorporated sodium alginate-based hydrogel as strain sensors

Thick-film Load-sensing bridges – Effect of Temperature and Mechanical Boundary Conditions