Electrostatically actuated MEMs relay for high power applications

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Nowadays, with the increased interest in applications dealing with high-power medium-voltage conversion, there is a strong need to master the design of medium-frequency transformers, which are one of the key components of modern DC transformers. The paper ...

This paper addresses the design and manufacturing of a crab-leg based MEMS relay for a high power application. Thanks to a contact resistance lower than 100 mΩ, the relay can hold a current in the order of magnitude of an Ampere without further thermal lim ...

The emergence of wide-band-gap (WBG) power transistors with low conduction losses and high-speed switching speeds has paved the way for more-than-ever efficient power electronics systems and huge energy saving potentials. Likewise, power density- the ratio ...

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

Recent research has reported an undesirable OFF-state loss in high-frequency soft-switching power converters, such as resonant converters. This loss is attributed to a hysteresis loss related to the charging-discharging process of the output capacitance of ...

Gallium nitride (GaN) power devices are employed in an increasing number of applications thanks to their excellent performance. Nevertheless, their potential for cryogenic applications, such as space, aviation, and superconducting systems, has not yet been ...

To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...

The concept of a multi-source inverter (MSI) based on NPC topology was recently introduced for hybrid-electric powertrains to connect several dc sources to the traction load in a single conversion stage without magnetics. This work proposes a new modulatio ...

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

Electrostatically actuated MEMs relay for high power applications

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Design Optimization of a MW-level Medium Frequency Transformer

Design and Manufacturing of an Electrostatic MEMS Relay for High Power Applications

Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies

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Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

Multiobjective Vector Modulation for Improved Control of NPC-Based Multi-Source Inverters in Hybrid Traction Systems

GaN-based power devices: Physics, reliability, and perspectives