Graphene Field Effect Devices Operating in Differential Configuration

After decades of miniaturization and performance tuning, Silicon electronics is approaching its technological limits. In the search for alternative transistor channel materials, Graphene has been given much attention since its discovery in 2004, mainly because it offers compelling values of carrier mobility and a consequent potential for high frequency operation, possibly reaching into the THz range. Certain drawbacks however, such as the weak or absent current saturation or the high “off’ current, limit the use of Graphene for traditional CMOS-like circuitry. Here we investigate the possibility of employing an alternative approach based on differential signaling, where saturation and off-current are not expected to preponderate.