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Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

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Direct laser writing of electronically conductive microstructures within soft hydrogel substrates

Veronica Navello, Stéphanie Lacour, Esther Amstad, Outman Akouissi, Lorenzo Lucherini

Hydrogels have emerged as promising materials for bioelectronic interfaces due to their tissue-like properties and high-water content. However, conventional hydrogels often suffer from poor electrical conductivity and mechanical stability, limiting their p ...

2025

Gate Driver Power Supply With Low-Capacitance-Coupling and Constant Output Voltage for Medium-Voltage SiC MOSFETs

Rui Wang

With the development of wide band-gap devices, Silicon Carbide (SiC) semiconductor devices in 10 kV–15 kV voltage class offer potentials in medium-voltage (MV) systems. To ensure reliable operation of these MV SiC devices, gate driver power supplies must m ...

2025

Environmental implications of solid oxide fuel cell system for hydrogen sustainability

François Maréchal, Jan Van Herle, Shivom Sharma, Xinyi Wei, Du Wen, Arthur Waeber

Hydrogen, known for its high energy content and clean combustion, is promising in the energy transition. This study explores the environmental impact of a solid oxide fuel cell (SOFC) system. 1 kg of hydrogen production at 1 bar serves as the functional un ...

2025

High-Temperature HEMT Mode

Farzan Jazaeri

Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Swiss Negative Emissions Fund – paying for Net Zero

Philippe Thalmann, Sascha Nick

In this paper, we propose setting up a fund to finance the removal of all Swiss territorial GHG (greenhouse gas) emissions from 2030. The fund will accelerate decarbonization and help reach annual net zero emissions around 2040, and then progressively remo ...

E4S Enterprise for Society2022

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Giovanni Santoruvo

In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are simultaneously controlled by lateral in-plane gates formed with the ...

Institute of Electrical and Electronics Engineers2020

InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

Maneesha Rupakula

Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...

EPFL2020

CO2 Capture and Management Strategies for Decarbonizing Secondary Aluminium Production

François Maréchal, Daniel Alexander Florez Orrego, Meire Ellen Gorete Ribeiro Domingos, Dareen Zuhir Omar Dardor

The production of aluminium largely depends on the use of fossil fuels, resulting in the emission of significant amounts of greenhouse gases. As the aluminium industry is working towards decreasing its environmental burdens, the elimination of direct emiss ...

2024

Cryogenic quantum computer control signal generation using high-electron-mobility transistors

Kirsten Emilie Moselund

Multiplexed local charge storage, close to quantum processors at cryogenic temperatures could generate a multitude of control signals, for electronics or qubits, in an efficient manner. Such cryogenic electronics require generating quasi-static control sig ...

2024

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, high-ene ...

2019

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Giovanni De Cesare, Sylvain Dunand, Luca Massimiliano Antognini, Jonathan Emanuel Thomet

Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...

Iop Publishing Ltd2024

Simulation and Fabrication of Monolithic III-V Photodetectors on Si: The Role of Growth Facets and Localization of Heterojunctions

Kirsten Emilie Moselund, Simone Iadanza

In this work, we provide important parameters to take into account when fabricating in-plane III-V photodetectors (PDs) integrated on silicon (Si) using template-assisted selective epitaxy (TASE). Their performance has previously been demonstrated, and her ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2024

Methodology for the identification of promising integrated biorefineries

Ayse Dilan Celebi

Steady increase in global energy consumption, greenhouse gas emissions, and depletion of fossil energy resources, together with increased attention towards sustainable development has prompted researchers to discover economical and environmentally competit ...

EPFL2019

Geospatial analysis and optimization of the incoming and stored CO2 emissions within the EPFL campus

Jean-Louis Scartezzini, Silvia Coccolo, Roberto Castello

All the projected scenarios agree on the immediate necessity of reducing greenhouse gas emissions, especially carbon dioxide (CO2). This research proposes an analysis on the EPFL campus of all the potential reductions of CO2 emissions: energy refurbishment ...

IOP science2019

Electric-field poling of a silicon nitride microring resonator for linear electro-optic modulation

Camille Sophie Brès, Edgars Nitiss, Boris Zabelich, Christian André Clément Lafforgue

The centrosymmetric structure of stoichiometric silicon nitride inhibits the realization of second-order nonlinear processes in this low-loss, complementary-metal-oxide-semiconductor fabrication-compatible platform. Nevertheless, linear electro-optic modul ...

SPIE2024

Techno-Economic Optimization of CO2-to-Methanol with Solid-Oxide Electrolyzer

François Maréchal, Jan Van Herle, Ligang Wang

Carbon capture and utilization are promising to tackle fossil-fuel depletion and climate change. CO2 hydrogenation can synthesize various chemicals and fuels, such as methanol, formic acid, urea, and methane. CO2-to-methanol integrated with solid-oxide ele ...

2019

Ultrathin Junctionless Nanowire FET Model, Including 2-D Quantum Confinements

Farzan Jazaeri

In this paper, we develop an explicit model to predict the dc electrical behavior in ultrathin surrounding gate junctionless (JL) nanowire field-effect transistors (FETs). The proposed model considers 2-D electrical and geometrical confinements of carrier ...

2019

Cryogenic MOS Transistor Model

Christian Enz, Arnout Lodewijk M Beckers, Farzan Jazaeri

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes. The model is dev ...

2018