Publications by Valerio Piazza

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Scalable and sustainable photovoltaic technologies require low-cost and earth-abundant semiconducting materials. Zinc phosphide is purported to be an absorber material with optimal photovoltaic properties. Herein we report the electrical properties of Zn3P ...

The integration of transition-metal dichalcogenides (TMDs) with non-planar substrates such as nanopillars provides a way to spatially modify the optical properties mainly through the localized strain. Similar studies to date have utilized insulating SiO2 n ...

Zinc phosphide (Zn3P2) has been lauded as a promising solar absorber material due to its functional properties and the abundance of zinc and phosphorous. In the last 4 decades, there has not been any significant improvement in the efficiencies of Zn3P2-bas ...

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

The growth kinetics of vertical III−V nanowires (NWs) were clarified long ago. The increasing aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the material collection. The group III adatom diffusion from the NW sidew ...

Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodit ...

Strain is a commonly used tool to tune the optoelectronic properties of semiconductors. It is especially effective for transition metal dichalcogenides (TMDs), which can withstand extreme strain up to 10%. To date, localised strain fields have been applied ...

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approac ...

Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

This dataset corresponds to the following manuscript: Zendrini, M., Dubrovskii, V., Rudra, A., Dede, D., Fontcuberta i Morral, A., Piazza, V. “Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engi ...

The performance of core-shell InGaN/GaN nanowire (NW) light emitting diodes (LEDs) can be limited by wire-to-wire electrical inhomogeneities. Here we investigate an array of core-shell InGaN/GaN NWs which are morphologically identical, but present electric ...

Nanowire-based terahertz photoconductive receivers offer many advantages over the existing bulk-based receivers, such as the capability of measuring the full terahertz polarization state and integrating into micro/nano-systems. However, their detection per ...

Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on ...

Raw data associated with the publication "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning", first published in Nanoscale Advances on the 23nd November 2020. ...

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

Accompanying dataset containing the raw data and analysis contained in the main publication. This comprises the fitted CL-SEM dataset, the CL-STEM dataset, the CL-SEM presented in the SI and the STEM-EDX linescans. ...

Valerio Piazza

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Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS & x2082; Using a GaAs Nanowire Array

Carrier generation and collection in Zn3P2/InP heterojunction solar cells

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

Strain induced lifting of the charged exciton degeneracy in monolayer MoS2 on a GaAs nanomembrane

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes

Scalable Receivers Based on Horizontally-grown InAs Nanowires Promise All-fiber Terahertz Spectrometer Systems

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Dataset for "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning"

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Accompanying dataset to ACS Appl. Nano Mater. 2022, 5, 4, 5508–5515 : Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices