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Luca Nela

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Related publications (33)

Co-designing electronics with microfluidics for more sustainable cooling

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis, Remco Franciscus Peter van Erp, Luca Nela

Thermal management is one of the main challenges for the future of electronics1,2,3,4,5. With the ever-increasing rate of data generation and communication, as well as the constant push to reduce the size and costs of industrial converter systems, the powe ...

NATURE RESEARCH2020

Bringing the Heat Sink Closer to the Heat: Evaluating Die-embedded Microchannel Cooling of GaN-on-Si Power Devices

Elison de Nazareth Matioli, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Remco Franciscus Peter van Erp, Luca Nela

With reducing transistor sizes and increasing levels of integration, extracting the heat from electronic devices is an ongoing challenge. Conventional indirect-cooling approaches are hindered by thermal interfaces, as well as heat spreading to larger areas ...

IEEE2020

Fast-switching Tri-Anode Schottky Barrier Diodes for monolithically integrated GaN-on-Si power circuits

Elison de Nazareth Matioli, Jun Ma, Georgios Kampitsis, Luca Nela

Tri-Anode GaN Schottky Barrier Diodes (SBDs) have recently shown excellent DC performance with low turn-on voltage and large breakdown thanks to their 3D contact structure around the two-dimensional electron gas (2DEG) channel. However, the 3D nature of th ...

Institute of Electrical and Electronics Engineers2020

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis, Remco Franciscus Peter van Erp, Luca Nela

In this work, we demonstrate a new thermal management approach for direct cooling of GaN-on-Si power integrated circuits (ICs), in which the Si substrate functions as a microfluidic heat sink, turning Si into a cost-effective, high thermal performance subs ...

IEEE2020

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

Kai Cheng, Elison de Nazareth Matioli, Catherine Erine, Remco Franciscus Peter van Erp, Luca Nela, Halil Kerim Yildirim

Multi-channel power devices, in which several AlGaN/GaN layers are stacked to achieve multiple two-dimensional electron gases (2DEGs), have recently led to a significant increase in the device conductivity while maintaining high breakdown voltage, resultin ...

Institute of Electrical and Electronics Engineers2020

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani, Luca Nela

The dissipated energy (Ediss) related to the resonant charging/discharging of a transistor output capacitance, becomes a dominant loss factor for power converters operating in the MHz range. A recent work has introduced a small-signal measurement method to ...

2020

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Catherine Erine, Luca Nela

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

Institute of Electrical and Electronics Engineers2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Luca Nela

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate based on sidewall depletion achieved by nanostructured gate with large work-function metal. ...

Institute of Electrical and Electronics Engineers2019

Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide

Elison de Nazareth Matioli, Jun Ma, Taifang Wang, Luca Nela

We report a novel process to achieve slanted field plate (S-FP), which is a field plate with a gradual increase thickness from gate edge towards drain - utilizing grayscale lithography on flowable oxide (FOX) in single process step, in which developed FOX ...

IEEE2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Luca Nela

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate achieved by a nanostructured gate region in combination with a large work-function gate met ...

IEEE2019

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Giovanni Santoruvo, Taifang Wang, Luca Nela

In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

2019

High-performance normally-off tri-gate GaN power MOSFETs

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Luca Nela

In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...

IEEE2019

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Kai Cheng, Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Catherine Erine, Luca Nela

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

IEEE2019

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