Publications by Luca Nela | EPFL Graph Search

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In this work, we demonstrate a new thermal management approach for direct cooling of GaN-on-Si power integrated circuits (ICs), in which the Si substrate functions as a microfluidic heat sink, turning Si into a cost-effective, high thermal performance subs ...

High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (P ...

With reducing transistor sizes and increasing levels of integration, extracting the heat from electronic devices is an ongoing challenge. Conventional indirect-cooling approaches are hindered by thermal interfaces, as well as heat spreading to larger areas ...

Efficient and compact power conversion is a key requirement to achieve sustainable electrification of our society. GaN-based power devices offer major benefits compared to their silicon counterparts in terms of efficiency and integration but suffer from se ...

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

Thermal management is one of the main challenges for the future of electronics1,2,3,4,5. With the ever-increasing rate of data generation and communication, as well as the constant push to reduce the size and costs of industrial converter systems, the powe ...

The dissipated energy (Ediss) related to the resonant charging/discharging of a transistor output capacitance, becomes a dominant loss factor for power converters operating in the MHz range. A recent work has introduced a small-signal measurement method to ...

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

Wide-Band-Gap semiconductors have enabled considerable miniaturization of power devices, which requires, however, new thermal management solutions to handle the resulting high heat fluxes. Recently, embedded liquid cooling in GaN-on-Si devices was demonstr ...

GaN transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available and little is known about their performance and potential impact on power ...

In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

The lateral structure of gallium nitride (GaN) semiconductors enables monolithic integration of logic and power devices, which offers promise to miniaturize bulky converters into a compact package. However, the concentrated heat that arises from this dense ...

In this paper, we illustrate the use of RF-sputtered p-NiO to fabricate Junction Termination Extensions (JTEs) for high-performance vertical GaN-on-Si Schottky Barrier Diodes (SBDs). The GaN epitaxial structures were grown on 6-inch Si wafers by MOCVD. The ...

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Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

GaN-based power devices: Physics, reliability, and perspectives

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Bringing the Heat Sink Closer to the Heat: Evaluating Die-embedded Microchannel Cooling of GaN-on-Si Power Devices

Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Co-designing electronics with microfluidics for more sustainable cooling

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

Multi-channel nanowire devices for efficient power conversion

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

High-performance normally-off tri-gate GaN power MOSFETs

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices