Publications by Luca Nela | EPFL Graph Search

Related publications (33)

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis

In this work, we demonstrate a new thermal management approach for direct cooling of GaN-on-Si power integrated circuits (ICs), in which the Si substrate functions as a microfluidic heat sink, turning Si into a cost-effective, high thermal performance subs ...

IEEE2020

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Elison de Nazareth Matioli, Luca Nela, Catherine Erine

High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...

AIP American Institute of Physics2021

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Luca Nela, Riyaz Mohammed Abdul Khadar

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Taifang Wang, Giovanni Santoruvo

In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

2019

Output-Capacitance Hysteresis Losses of Field-Effect Transistors

Elison de Nazareth Matioli, Armin Jafari, Luca Nela, Palliyage Srilak Nirmana Perera, Georgios Kampitsis

Resonant-type power converters are supposed to generate zero switching losses during soft-switching operation. In recent research, unexpected switching losses were reported in these converters, which were attributed to a large-signal hysteresis observed in ...

IEEE2020

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Remco Franciscus Peter van Erp, Catherine Erine, Halil Kerim Yildirim

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

IEEE2021

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Elison de Nazareth Matioli, Luca Nela, Mohammad Samizadeh Nikooytabalvandani, Taifang Wang

In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (P ...

IEEE2021

Bringing the Heat Sink Closer to the Heat: Evaluating Die-embedded Microchannel Cooling of GaN-on-Si Power Devices

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera, Georgios Kampitsis

With reducing transistor sizes and increasing levels of integration, extracting the heat from electronic devices is an ongoing challenge. Conventional indirect-cooling approaches are hindered by thermal interfaces, as well as heat spreading to larger areas ...

IEEE2020

Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera

Efficient and compact power conversion is a key requirement to achieve sustainable electrification of our society. GaN-based power devices offer major benefits compared to their silicon counterparts in terms of efficiency and integration but suffer from se ...

IEEE2021

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

Institute of Electrical and Electronics Engineers2019

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Mohammad Samizadeh Nikooytabalvandani, Catherine Erine, Minghua Zhu, Pirouz Sohi

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Institute of Electrical and Electronics Engineers2021

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Elison de Nazareth Matioli, Luca Nela, Catherine Erine

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

2021

Co-designing electronics with microfluidics for more sustainable cooling

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis

Thermal management is one of the main challenges for the future of electronics1,2,3,4,5. With the ever-increasing rate of data generation and communication, as well as the constant push to reduce the size and costs of industrial converter systems, the powe ...

NATURE RESEARCH2020

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

Elison de Nazareth Matioli, Luca Nela, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera

The dissipated energy (Ediss) related to the resonant charging/discharging of a transistor output capacitance, becomes a dominant loss factor for power converters operating in the MHz range. A recent work has introduced a small-signal measurement method to ...

2020

Multi-channel nanowire devices for efficient power conversion

Elison de Nazareth Matioli, Vasiliki Tileli, Jun Ma, Luca Nela, Tzu-Hsien Shen, Catherine Erine, Taifang Wang

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

2021

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Catherine Erine

Wide-Band-Gap semiconductors have enabled considerable miniaturization of power devices, which requires, however, new thermal management solutions to handle the resulting high heat fluxes. Recently, embedded liquid cooling in GaN-on-Si devices was demonstr ...

Institute of Electrical and Electronics Engineers2021

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Remco Franciscus Peter van Erp, Georgios Kampitsis

GaN transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available and little is known about their performance and potential impact on power ...

2020

High-performance normally-off tri-gate GaN power MOSFETs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...

IEEE2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate based on sidewall depletion achieved by nanostructured gate with large work-function metal. ...

Institute of Electrical and Electronics Engineers2019