Publications by Yao Chen | EPFL Graph Search

Related publications (5)

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024

GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface

Nicolas Grandjean, Jean-François Carlin, Wei Liu, Yao Chen

An indium-containing layer positioned underneath the InGaN/GaN quantum well (QW) active region is commonly used in high efficiency blue light-emitting diodes. Recent studies proposed that the role of this underlayer is to trap surface defects (SDs), which, ...

AIP Publishing2021

VN-VIn divacancies as the origin of non-radiative recombination centers in InGaN quantum wells

Anna Toschi, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yao Chen

In this paper, we investigate the nature of surface defects originating from the high-temperature (HT) GaN buffer and their incorporation into InGaN quantum wells (QWs) grown using the metalorganic vapor phase epitaxy technique. In particular, we conduct a ...

AIP Publishing2025

Deformation response of highly stretchable and ductile graphene kirigami under uniaxial and biaxial tension

Ye Wei, Yao Chen

Kirigami, the ancient technique of paper cutting, has been successfully applied to enhance the stretchability and ductility of nanoscale graphene. However, existing experimentally realized graphene kirigami (GK) are created by introducing parallel cuts, ex ...

Amer Physical Soc2023

Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Nicolas Grandjean, Jean-François Carlin, Pirouz Sohi, Yao Chen

We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (

IOP PUBLISHING LTD2019