Publications by Myung Jae Lee | EPFL Graph Search

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This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

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8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

We present the world's first backside-illuminated (BSI) single-photon avalanche diode (SPAD) based on standard silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology. This SPAD achieves a good dark count rate (DCR) after backs ...

We present an analog silicon photomultiplier (SiPM) based on a standard 55-nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16 x 16 single-photon avalanche diodes (SPADs) and measures 0.29 x 0.32 mm(2). Each SPAD cell is passively quenched by ...

This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 mu m diffusion apertures is used to engineer the Zn diffusion profile t ...

3Dstacked CMOS SPAD based image sensors hold the promise for better sensitivity and more functionality per pixel. The technology enables to separate detection from computation onto different chips, or tiers, that are stacked onto one another. One advantage ...

Single-photon detection and photon counting are useful tools in many fields, from light detection and ranging (LiDAR) to biomedical imaging and from time-resolved Raman spectroscopy to quantum applications. In this context, recently, single-photon avalanch ...

CMOS Single-Photon Avalanche Diodes (SPADs) have broken into the mainstream by enabling the adoption of imaging, timing, and security technologies in a variety of applications within the consumer, medical and industrial domains. The continued scaling of te ...

The goal of this paper is to introduce CMOS-based single-photon detectors in terms of technology and applications. We cover background and recent progress on the detectors and describe emerging applications based on the technology. ...

Light detection and ranging (LiDAR) systems based on direct time-of-flight (DTOF) are used in spacecraft navigation, assembly-line robotics, augmented and virtual reality (AR/VR), (drone-based) surveillance, advanced driver assistance systems (ADAS), and a ...

Single-photon avalanche diode (SPAD) based sensors and systems enable a variety of applications in biomedical, automotive, consumer, and security domains. While several established standard technologies, which can facilitate the design of SPAD-based system ...

This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOSDMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well availab ...

Myung Jae Lee

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A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

On Analog Silicon Photomultipliers in Standard 55-nm BCD Technology for LiDAR Applications

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

3D-Stacked CMOS SPAD Image Sensors: Technology and Applications

Progress in single-photon avalanche diode image sensors in standard CMOS: From two-dimensional monolithic to three-dimensional-stacked technology

Engineering Breakdown Probability Profile for PDP and DCR Optimization in a SPAD Fabricated in a Standard 55nm BCD Process

CMOS-Based Single-Photon Detectors: Technology and Applications

A 256x256 45/65nm 3D-Stacked SPAD-Based Direct TOF Image Sensor for LiDAR Applications with Optical Polar Modulation for up to 18.6dB Interference Suppression

Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD

Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage

A 256x128 3D-Stacked (45nm) SPAD FLASH LiDAR with 7-Level Coincidence Detection and Progressive Gating for 100m Range and 10klux Background Light

Architecture and Characterization of a CMOS 3D-Stacked FSI Multi-Channel Digital SiPM for Time-of-Flight PET Applications

SPAD Microcells with 12.1 ps SPTR for SiPMs in TOF-PET Applications

CMOS 3D-Stacked FSI Multi-Channel Digital SiPM for Time-of-Flight Vision Applications